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BCY58XLEADFREE

Description
Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size540KB,2 Pages
ManufacturerCentral Semiconductor
Environmental Compliance  
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BCY58XLEADFREE Overview

Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN

BCY58XLEADFREE Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerCentral Semiconductor
Parts packaging codeBCY
package instructionCYLINDRICAL, O-MBCY-W3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)60
JEDEC-95 codeTO-18
JESD-30 codeO-MBCY-W3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN (315)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Maximum off time (toff)800 ns
Maximum opening time (tons)150 ns
BCY58, VII, VIII, IX, X
BCY59, VII, VIII, IX, X
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCY58 and BCY59
series types are silicon NPN epitaxial planar transistors,
mounted in a hermetically sealed metal case, designed
for low noise amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
ELECTRICAL
SYMBOL
ICBO
ICBO
IEBO
BVCBO
BVCBO
BVCEO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
PD
PD
TJ, Tstg
JA
JC
BCY58
32
32
BCY59
45
45
UNITS
V
V
V
mA
mA
mA
mW
W
°C
°C/W
°C/W
7.0
100
200
200
340
1.0
-65 to +200
450
150
CHARACTERISTICS:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
VCB=Rated VCBO
VCB=Rated VCBO, TA=150°C
VEB=5.0V
IC=10μA (BCY58)
32
IC=10μA (BCY59)
45
IC=2.0mA (BCY58)
32
IC=2.0mA (BCY59)
45
IE=1.0μA
7.0
IC=10mA, IB=250μA
IC=100mA, IB=2.5mA
IC=10mA, IB=250μA
0.60
IC=100mA, IB=2.5mA
0.75
BCY58-VII
BCY59-VII
MIN TYP MAX
-
20
-
120 -
220
80
-
-
40
-
-
MAX
10
10
10
0.35
0.70
0.85
1.20
BCY58-IX
BCY59-IX
MIN MAX
40
-
250 460
160 630
60
-
UNITS
nA
μA
nA
V
V
V
V
V
V
V
V
V
BCY58-X
BCY59-X
MIN MAX
100
-
380 630
240 1000
60
-
hFE
hFE
hFE
hFE
VCE=5.0V,
VCE=5.0V,
VCE=1.0V,
VCE=1.0V,
IC=10μA
IC=2.0mA
IC=10mA
IC=100mA
BCY58-VIII
BCY59-VIII
MIN MAX
20
-
180 310
120 400
45
-
R2 (8-November 2013)

BCY58XLEADFREE Related Products

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Description Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, TO-18, 3 PIN
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to
Parts packaging code BCY BCY BCY BCY BCY BCY BCY BCY
package instruction CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Contacts 3 3 3 3 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 32 V 32 V 32 V 45 V 45 V 32 V 45 V 45 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 60 60 40 60 60 45 45 40
JEDEC-95 code TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
JESD-609 code e3 e3 e3 e3 e3 e3 e3 e3
Number of components 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C
Package body material METAL METAL METAL METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260 260 260
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO
Terminal surface MATTE TIN (315) MATTE TIN (315) MATTE TIN (315) MATTE TIN (315) MATTE TIN (315) MATTE TIN (315) Matte Tin (Sn) MATTE TIN (315)
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 10 10 10 10 10 10 10 10
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz
Maximum off time (toff) 800 ns 800 ns 800 ns 800 ns 800 ns 800 ns 800 ns 800 ns
Maximum opening time (tons) 150 ns 150 ns 150 ns 150 ns 150 ns 150 ns 150 ns 150 ns
Maker Central Semiconductor Central Semiconductor Central Semiconductor Central Semiconductor - Central Semiconductor Central Semiconductor Central Semiconductor
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