DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
BDP31
NPN medium power transistor
Product specification
Supersedes data of 1997 Mar 10
1999 Apr 23
Philips Semiconductors
Product specification
NPN medium power transistor
FEATURES
•
High current (max. 3 A)
•
Low voltage (max. 45 V).
APPLICATIONS
•
General purpose medium power applications.
DESCRIPTION
NPN medium power transistor in a SOT223 plastic
package. PNP complement: BDP32.
handbook, halfpage
BDP31
PINNING
PIN
1
2,4
3
base
collector
emitter
DESCRIPTION
4
2, 4
1
3
1
Top view
2
3
MAM287
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for the SOT223 in the General Part of associated
Handbook”.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
mb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
70
45
6
3
6
0.5
1.35
+150
150
+150
V
V
V
A
A
A
W
°C
°C
°C
UNIT
1999 Apr 23
2
Philips Semiconductors
Product specification
NPN medium power transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
VALUE
91
10
BDP31
UNIT
K/W
K/W
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for the SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
f
T
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
transition frequency
CONDITIONS
I
E
= 0; V
CB
= 50 V;
I
E
= 0; V
CB
= 50 V; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V;
I
C
= 0.5 A; V
CE
= 12 V; note 1; see Fig.2
I
C
= 2 A; V
CE
= 1 V; note 1; see Fig.2
I
C
= 500 mA; I
B
= 50 mA; note 1
I
C
= 2 A; I
B
= 200 mA; note 1
I
C
= 500 mA; I
B
= 50 mA; note 1
I
C
= 2 A; I
B
= 200 mA; note 1
I
C
= 250 mA; V
CE
= 5 V; f = 100 MHz
−
−
−
40
20
−
−
−
−
60
MIN.
MAX.
50
10
50
−
−
300
700
1.2
1.5
−
mV
mV
V
V
MHz
UNIT
nA
µA
nA
1999 Apr 23
3
Philips Semiconductors
Product specification
NPN medium power transistor
BDP31
MGD840
80
handbook, full pagewidth
hFE
60
40
20
0
10
−1
1
10
10
2
10
3
IC (mA)
10
4
V
CE
= 1 V.
Fig.2 DC current gain; typical values.
1999 Apr 23
4
Philips Semiconductors
Product specification
NPN medium power transistor
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
BDP31
SOT223
D
B
E
A
X
c
y
H
E
b
1
v
M
A
4
Q
A
A
1
1
e
1
e
2
b
p
3
w
M
B
detail X
L
p
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.8
1.5
A
1
0.10
0.01
b
p
0.80
0.60
b
1
3.1
2.9
c
0.32
0.22
D
6.7
6.3
E
3.7
3.3
e
4.6
e
1
2.3
H
E
7.3
6.7
L
p
1.1
0.7
Q
0.95
0.85
v
0.2
w
0.1
y
0.1
OUTLINE
VERSION
SOT223
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
96-11-11
97-02-28
1999 Apr 23
5
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