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2SC2859YTE85L

Description
TRANSISTOR 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size131KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SC2859YTE85L Overview

TRANSISTOR 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal

2SC2859YTE85L Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
VCEsat-Max0.25 V
Base Number Matches1
2SC2859
TOSHIBA Transistor
Silicon NPN Epitaxial (PCT process)
2SC2859
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
Excellent h
FE
linearity
:
I
C
= 400 mA)
Complementary to 2SA1182.
h
FE (2)
= 25 (min) (V
CE
= 6 V,
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
35
30
5
500
50
150
125
−55~125
Unit
V
V
V
mA
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
TO-236MOD
temperature/current/voltage and the significant change in
JEITA
SC-59
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-3F1A
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.012 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
(Note)
Symbol
I
CBO
I
EBO
h
FE (1)
h
FE (2)
V
CE (sat)
V
BE
f
T
C
ob
Test Condition
V
CB
=
35 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
1 V, I
C
=
100 mA
V
CE
=
6 V, I
C
=
400 mA
I
C
=
100 mA, I
B
=
10 mA
V
CE
=
1 V, I
C
=
100 mA
V
CE
=
6 V, I
C
=
20 mA
V
CB
=
6 V, I
E
=
0, f
=
1 MHz
Min
70
25
Typ.
0.1
0.8
300
7
Max
0.1
0.1
400
0.25
1.0
V
V
MHz
pF
Unit
μA
μA
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Note: h
FE (1)
classification
h
FE (2)
classification
O (O): 70~140, Y (Y): 120~240, GR (G): 200~400
O: 25 min, Y: 40 min, GR: 70 min
( ) marking symbol
Marking
1
2007-11-01
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