HY5V52CF-8 datasheet, PDF - EEWORLD Datasheet

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HY5V52CF-8: DescriptionSynchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90; Categorystorage storage; File Size162KB，12 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HY5V52CF-8 Overview

Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90

HY5V52CF-8 Parametric

Parameter Name	Attribute value
Maker	SK Hynix
Parts packaging code	BGA
package instruction	LFBGA, BGA90,9X15,32
Contacts	90
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	6 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	125 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PBGA-B90
JESD-609 code	e1
length	13 mm
memory density	268435456 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	32
Number of functions	1
Number of ports	1
Number of terminals	90
word count	8388608 words
character code	8000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8MX32
Package body material	PLASTIC/EPOXY
encapsulated code	LFBGA
Encapsulate equivalent code	BGA90,9X15,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	1.4 mm
self refresh	YES
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.002 A
Maximum slew rate	0.4 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	TIN SILVER COPPER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
width	11 mm

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HY5V52CF

4 Banks x 2M x 32Bit Synchronous DRAM

Document Title

4Banks x 2M x 32Bit Synchronous DRAM

Revision History

Revision No.

0.1

0.2

0.3

0.4

0.5

0.6

0.7

Initial Draft

2nd Generation

133MHz Speed Added

Changed IDD Spec.

Changed Package Size

166MHz Speed Added

Defined Input/Output Cap. Spec.

History

Draft Date

Sep.06.2002

Nov.11.2002

Dec.13.2002

June.27.2003

July.14.2003

Aug. 06.2003

Dec. 05.2003

Remark

Preliminary

This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume

any responsibility for use of circuits described. No patent licenses are implied.

Rev. 0.7 / Dec. 2003

HY5V52CF-8 Related Products

	HY5V52CF-8	HY5V52CLF-H	HY5V52CLF-P	HY5V52CLF-8	HY5V52CF-P	HY5V52CF-S	HY5V52CF-H	HY5V52CLF-6	HY5V52CLF-S
Description	Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90	Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90	Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90	Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90	Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90	Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90	Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90	Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90	Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, 0.80 MM PITCH, FBGA-90
Maker	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix	SK Hynix
Parts packaging code	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
package instruction	LFBGA, BGA90,9X15,32	LFBGA, BGA90,9X15,32	LFBGA, BGA90,9X15,32	LFBGA, BGA90,9X15,32	LFBGA, BGA90,9X15,32	LFBGA, BGA90,9X15,32	LFBGA, BGA90,9X15,32	LFBGA, BGA90,9X15,32	LFBGA, BGA90,9X15,32
Contacts	90	90	90	90	90	90	90	90	90
Reach Compliance Code	unknown	compliant	unknown	unknown	unknown	unknown	unknown	compliant	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	6 ns	5.5 ns	6 ns	6 ns	6 ns	6 ns	5.5 ns	5.4 ns	6 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	125 MHz	133 MHz	100 MHz	125 MHz	100 MHz	100 MHz	133 MHz	166 MHz	100 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8
JESD-30 code	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90	R-PBGA-B90
length	13 mm	13 mm	13 mm	13 mm	13 mm	13 mm	13 mm	13 mm	13 mm
memory density	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
memory width	32	32	32	32	32	32	32	32	32
Number of functions	1	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1	1
Number of terminals	90	90	90	90	90	90	90	90	90
word count	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words
character code	8000000	8000000	8000000	8000000	8000000	8000000	8000000	8000000	8000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	8MX32	8MX32	8MX32	8MX32	8MX32	8MX32	8MX32	8MX32	8MX32
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA
Encapsulate equivalent code	BGA90,9X15,32	BGA90,9X15,32	BGA90,9X15,32	BGA90,9X15,32	BGA90,9X15,32	BGA90,9X15,32	BGA90,9X15,32	BGA90,9X15,32	BGA90,9X15,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096	4096	4096	4096	4096	4096	4096
Maximum seat height	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm
self refresh	YES	YES	YES	YES	YES	YES	YES	YES	YES
Continuous burst length	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP
Maximum standby current	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A
Maximum slew rate	0.4 mA	0.44 mA	0.4 mA	0.4 mA	0.4 mA	0.4 mA	0.44 mA	0.44 mA	0.4 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V	3.135 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
width	11 mm	11 mm	11 mm	11 mm	11 mm	11 mm	11 mm	11 mm	11 mm
JESD-609 code	e1	-	e1	e1	e1	e1	-	-	e1
Terminal surface	TIN SILVER COPPER	-	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	-	-	TIN SILVER COPPER

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