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KM4132G271BQR-10

Description
128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL
Categorystorage    storage   
File Size676KB,51 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

KM4132G271BQR-10 Overview

128K x 32bit x 2 Banks Synchronous Graphic RAM LVTTL

KM4132G271BQR-10 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeQFP
package instructionQFP, QFP100,.7X.9
Contacts100
Reach Compliance Codeunknow
ECCN codeEAR99
access modeDUAL BANK PAGE BURST
Maximum access time7 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)100 MHz
I/O typeCOMMON
interleaved burst length4,8
JESD-30 codeR-PQFP-G100
JESD-609 codee0
length20 mm
memory density8388608 bi
Memory IC TypeSYNCHRONOUS GRAPHICS RAM
memory width32
Number of functions1
Number of ports1
Number of terminals100
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX32
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeQFP
Encapsulate equivalent codeQFP100,.7X.9
Package shapeRECTANGULAR
Package formFLATPACK
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle1024
Maximum seat height3 mm
self refreshYES
Continuous burst length1,2,4,8,FP
Maximum standby current0.002 A
Maximum slew rate0.21 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.65 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
width14 mm
KM4132G271B
CMOS SGRAM
8Mbit SGRAM
128K x 32bit x 2 Banks
Synchronous Graphic RAM
LVTTL
Revision 2.4
May 1998
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 2.4 (May 1998)
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