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2SD1213Q

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size128KB,3 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

2SD1213Q Overview

Transistor

2SD1213Q Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1213
DESCRIPTION
・With
TO-3PN package
・Low
collector saturation voltage
・Large
current capacity.
・Complement
to type 2SB904
APPLICATIONS
・Large
current switching of relay drivers,
high-speed inverters, converters.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
固电
导½
PARAMETER
INC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
ANG
H
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
CT
NDU
O
VALUE
60
30
6
20
30
UNIT
V
V
V
A
A
Collector current (Pulse)
T
C
=25℃
60
W
2.5
150
-55~150
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature

2SD1213Q Related Products

2SD1213Q 2SD1213R 2SD1213S 2SD1213
Description Transistor Transistor Transistor Transistor
Reach Compliance Code unknow unknow unknow unknow
Base Number Matches 1 1 1 1
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