Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1213
DESCRIPTION
・With
TO-3PN package
・Low
collector saturation voltage
・Large
current capacity.
・Complement
to type 2SB904
APPLICATIONS
・Large
current switching of relay drivers,
high-speed inverters, converters.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-3PN) and symbol
Emitter
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
固电
导½
半
PARAMETER
INC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
ANG
H
MIC
E SE
Open emitter
Open base
Open collector
CONDITIONS
OR
CT
NDU
O
VALUE
60
30
6
20
30
UNIT
V
V
V
A
A
Collector current (Pulse)
T
C
=25℃
60
W
2.5
150
-55~150
℃
℃
P
C
Collector power dissipation
T
a
=25℃
T
j
T
stg
Junction temperature
Storage temperature
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=1mA ;R
BE
=∞
I
C
=1mA; I
E
=0
I
E
=1mA; I
C
=0
I
C
=8A; I
B
=0.4A
V
CB
=40V; I
E
=0
V
EB
=4V; I
C
=0
I
C
=1A ; V
CE
=2V
I
C
=10A ; V
CE
=2V
I
C
=1A ; V
CE
=5V
70
30
MIN
30
60
6
2SD1213
TYP.
MAX
UNIT
V
V
V
0.4
0.1
0.1
280
V
mA
mA
Switching times
t
on
t
s
t
f
固电
Fall time
Turn-on time
Storage time
导½
半
h
FE-1
Classifications
Q
70-140
R
100-200
ANG
CH
IN
S
140-280
MIC
E SE
I
C
=10A;I
B1
=-I
B2
=-0.5A
V
CC
=10V ;R
L
=1Ω
OR
CT
NDU
O
0.3
0.6
0.02
120
MHz
μs
μs
μs
2
PCB Design
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