Ordering number:ENN2511A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1593/2SC4135
High-Voltage Switching Applications
Applications
· Power supplies, relay derivers, lamp drivers.
Package Dimensions
unit:mm
2045B
[2SA1593/2SC4135]
6.5
5.0
4
Features
· Adoption of FBET, MBIT processes.
· High breakdown voltage and large current capacity.
· Fast switching speed.
· Small and slim package permitting 2SA1593/
2SC4135-applied sets to be made more compact.
0.85
0.7
1.5
2.3
0.5
5.5
7.0
0.8
1.6
1.2
0.6
1
2
3
7.5
0.5
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
unit:mm
2044B
[2SA1593/2SC4135]
6.5
5.0
4
2.3
1.5
0.5
5.5
7.0
0.85
1
0.6
0.8
0.5
2
3
2.5
1.2
0 to 0.2
1.2
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1003TN (KT)/8219MO/4097TA, TS No.2511-1/5
2SA1593/2SC4135
( ) : 2SA1593
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Ratings
(–)120
(–)100
(–)6
(–)2
(–)3
1
Unit
V
V
V
A
A
W
W
Tc=25˚C
15
150
–55 to +150
˚C
˚C
* : The 2SA1593/2SC4135 are classified by 100mA h
FE
as follows :
Rank
hFE
R
100 to 200
S
140 to 280
T
200 to 400
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VCB=(–)100V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)100mA
VCE=(–)10V, IC=(–)100mA
VCB=(–)10V, f=1MHz
IC=(–)1A, IB=(–)100mA
100*
120
(25)
16
(–0.22)
0.13
(–)0.85
(–)120
(–)100
(–)6
(80)
80
(750)
1000
(40)
50
(–0.6)
0.4
(–)1.2
Conditions
Ratings
min
typ
max
(–)100
(–)100
400*
MHz
pF
pF
V
V
V
V
V
V
ns
ns
ns
ns
ns
ns
Unit
nA
nA
VBE(sat) IC=(–)1A, IB=(–)100mA
V(BR)CBO IC=(–)10µA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
ton
tstg
tf
IE=(–)10µA, IC=0
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
Switching Time Test Circuit
IB1
IB2
INPUT
PW=20µs
DC≤1%
50Ω
VR
RB
+
100µF
--5V
+
470µF
OUTPUT
RL
50V
10IB1= --10IB2= IC=0.7A
For PNP, the polarity is reversed.
No.2511-2/5
2SA1593/2SC4135
--2.0
IC -- VCE
2SA1593
2.0
IC -- VCE
2SC4135
--1.6
--4
A
0m
-5
-
0
mA
Collector Current, IC – A
--1.2
--10mA
Collector Current, IC – A
mA
--30
A
--20m
1.6
1.2
A
50m
A
40m
A
30m
A
20m
--0.8
--5mA
--3mA
10mA
0.8
5mA
3mA
--0.4
--2mA
--1mA
IB=0
0
--1
--2
--3
--4
--5
ITR04011
0.4
2mA
1mA
0
0
0
1
2
3
IB=0
4
5
ITR04012
Collector-to-Emitter Voltage, VCE – V
--1.0
Collector-to-Emitter Voltage, VCE – V
1.0
IC -- VCE
IC -- VCE
5.0
m
4.5m
--6m
--0.8
A
--5m
A
A
2SA1593
A
4.0mA
3.5mA
3.0mA
2.5mA
2.0mA
2SC4135
0.8
Collector Current, IC – A
--4mA
--0.6
--3mA
Collector Current, IC – A
0.6
--0.4
--2mA
--1mA
0.4
1.5mA
0.2
--0.2
1.0mA
0.5mA
0
0
--10
IB=0
--20
--30
--40
--50
ITR04013
0
0
10
IB=0
20
30
40
50
ITR04014
Collector-to-Emitter Voltage, VCE – V
--2.4
Collector-to-Emitter Voltage, VCE – V
2.4
IC -- VBE
2SA1593
VCE=--5V
Collector Current, IC – A
IC -- VBE
2SC4135
VCE=5V
--2.0
2.0
Collector Current, IC – A
--1.6
1.6
--1.2
1.2
Ta=7
5
°
C
25
°
C
--25
°
C
--0.8
0.8
--0.4
0.4
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
ITR04016
Base-to-Emitter Voltage, VBE – V
1000
7
5
ITR04015
1000
hFE -- IC
2SA1593
VCE=--5V
Base-to-Emitter Voltage, VBE – V
hFE -- IC
Ta=7
5
°
C
25
°
C
--25
°
C
7
5
2SC4135
VCE=5V
DC Current Gain, hFE
3
2
Ta=75
°
C
25°C
--25°C
DC Current Gain, hFE
3
2
Ta=75
°
C
--25
°
C
100
7
5
100
7
5
25
°
C
3
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
3
7 0.01
2
3
5
7
0.1
2
3
5
7
1.0
2
3
Collector Current, IC – A
ITR04017
f
I
Collector Current, IC – A
ITR04018
C b
V
No.2511-3/5
3
f T -- IC
C
2SA1593/2SC4135
2SA1593 / 2SC4135
VCE=10V
Output Capacitance, Cob – pF
1000
7
5
Cob -- VCB
2SA1593 / 2SC4135
f=1MHz
C
Gain-Bandwidth Product, fT – MHz
2
100
7
5
2S
593
A1
41
35
3
2
2SA
2SC
159
3
C
2S
413
5
3
2
100
7
5
3
10
7 0.01
2
3
5
(For PNP, minus sign is omitted.)
7 0.1
2
3
5
7 1.0
2
3
(For PNP, minus sign is omitted.)
7
1.0
2
3
5
7
10
2
3
5
7
Collector Current, IC – A
--1000
7
ITR04019
1000
7
VCE(sat) -- IC
Collector-to-Base Voltage, VCB -- V
2
100
ITR04020
VCE(sat) -- IC
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
5
3
2
Collector-to-Emitter
Saturation Voltage, VCE (sat) – mV
2SA1593
IC / IB=10
2SC4135
IC / IB=10
5
3
2
--100
7
5
3
2
--10
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
100
7
5
3
2
10
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
75
°
C
Ta=
25
°
C
5
°
C
--2
Ta=75°C
--25°C
25
°
C
Collector Current, IC – A
--10
7
ITR04021
10
7
Collector Current, IC – A
ITR04022
VBE(sat) -- IC
2SA1593
IC / IB=10
VBE(sat) -- IC
2SC4135
IC / IB=10
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
5
Base-to-Emitter
Saturation Voltage, VBE (sat) – V
5
3
2
3
2
--1.0
Ta=--25°C
7
5
3
7 --0.01
2
3
5
7 --0.1
25
°
C
1.0
7
5
3
Ta=--25
°C
25
°C
75
°
C
75
°
C
2
3
5
7 --1.0
2
3
7 0.01
2
3
5 7
0.1
2
3
5
7
1.0
2
3
Collector Current, IC – A
5
3
2
ITR04023
16
ASO
Collector Current, IC – A
ITR04024
PC -- Ta
ICP=3.0A
IC =2.0A
DC
op
era
1m
s
15
14
2SA1593 / 2SC4135
1.0
5
3
2
0.1
5
3
2
0.01
5
3
Collector Dissipation, P
C
– W
DC
Collector Current, IC – A
s
10m
12
10
8
6
4
2
1
0
op
er
ati
on
tio
n
Ta
=
25
100
ms
°
C
5
°
C
=2
Tc
2SA1593 / 2SC4135
Tc=25°C
Single pulse
(For PNP, minus sign is omitted.)
5
7 1.0
2
3
5
7 10
2
3
5
No heat sink
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE –
7 100
2
V
ITR04025
Ambient Temperature, Ta – ˚C
ITR04026
No.2511-4/5
2SA1593/2SC4135
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2003. Specifications and information herein are subject
to change without notice.
PS No.2511-5/5
京公网安备 11010802033920号
EEWORLD
