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2SC4135T(TP)

Description
TRANSISTOR,BJT,NPN,100V V(BR)CEO,2A I(C),TO-251VAR
CategoryDiscrete semiconductor    The transistor   
File Size45KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

2SC4135T(TP) Overview

TRANSISTOR,BJT,NPN,100V V(BR)CEO,2A I(C),TO-251VAR

2SC4135T(TP) Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
Maximum collector current (IC)2 A
ConfigurationSingle
Minimum DC current gain (hFE)200
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)15 W
surface mountNO
Base Number Matches1
Ordering number:ENN2511A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1593/2SC4135
High-Voltage Switching Applications
Applications
· Power supplies, relay derivers, lamp drivers.
Package Dimensions
unit:mm
2045B
[2SA1593/2SC4135]
6.5
5.0
4
Features
· Adoption of FBET, MBIT processes.
· High breakdown voltage and large current capacity.
· Fast switching speed.
· Small and slim package permitting 2SA1593/
2SC4135-applied sets to be made more compact.
0.85
0.7
1.5
2.3
0.5
5.5
7.0
0.8
1.6
1.2
0.6
1
2
3
7.5
0.5
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
unit:mm
2044B
[2SA1593/2SC4135]
6.5
5.0
4
2.3
1.5
0.5
5.5
7.0
0.85
1
0.6
0.8
0.5
2
3
2.5
1.2
0 to 0.2
1.2
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1003TN (KT)/8219MO/4097TA, TS No.2511-1/5

2SC4135T(TP) Related Products

2SC4135T(TP) 2SA1593T(TP-FA) 2SA1593T(TP) 2SA1593R(TP-FA) 2SC4135R(TP-FA) 2SC4135S(TP) 2SC4135T(TP-FA)
Description TRANSISTOR,BJT,NPN,100V V(BR)CEO,2A I(C),TO-251VAR TRANSISTOR,BJT,PNP,100V V(BR)CEO,2A I(C),TO-252VAR TRANSISTOR,BJT,PNP,100V V(BR)CEO,2A I(C),TO-251VAR TRANSISTOR,BJT,PNP,100V V(BR)CEO,2A I(C),TO-252VAR TRANSISTOR,BJT,NPN,100V V(BR)CEO,2A I(C),TO-252VAR TRANSISTOR,BJT,NPN,100V V(BR)CEO,2A I(C),TO-251VAR TRANSISTOR,BJT,NPN,100V V(BR)CEO,2A I(C),TO-252VAR
Reach Compliance Code compli compli compli compli compli compli compli
Maximum collector current (IC) 2 A 2 A 2 A 2 A 2 A 2 A 2 A
Configuration Single Single Single Single Single Single Single
Minimum DC current gain (hFE) 200 200 200 100 100 140 200
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type NPN PNP PNP PNP NPN NPN NPN
Maximum power dissipation(Abs) 15 W 15 W 15 W 15 W 15 W 15 W 15 W
surface mount NO YES NO YES YES NO YES
Base Number Matches 1 1 1 1 1 1 1
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