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SML50A23

Description
Power Field-Effect Transistor, 23A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, HERMETIC SEALED PACKAGE-2
CategoryDiscrete semiconductor    The transistor   
File Size24KB,2 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric View All

SML50A23 Overview

Power Field-Effect Transistor, 23A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, HERMETIC SEALED PACKAGE-2

SML50A23 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerTT Electronics plc
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)1300 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)23 A
Maximum drain-source on-resistance0.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)84 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
SML50A23
TO–3 Package Outline.
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
1.52 (0.06)
3.43 (0.135)
6.35 (0.25)
9.15 (0.36)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
1
2
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
V
DSS
I
D(cont)
R
DS(on)
500V
23A
0.20Ω
38.61 (1.52)
39.12 (1.54)
1.47 (0.058)
1.60 (0.063)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
22.23
(0.875)
max.
Pin 1 – Gate
Pin 2 – Source
Case – Drain
• Faster Switching
• Lower Leakage
• TO–3 Hermetic Package
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
D
G
S
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25°C, L = 5.90mH, R
G
= 25Ω, Peak I
L
= 23A
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
500
23
84
±30
±40
235
1.88
–55 to 150
300
21
30
1300
V
A
A
V
W
W/°C
°C
A
mJ
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 5964
Issue 1

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