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2SC4159-E

Description
Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220ML, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size37KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric Compare View All

2SC4159-E Overview

Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220ML, 3 PIN

2SC4159-E Parametric

Parameter NameAttribute value
Objectid1991532221
Parts packaging codeTO-220ML
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
YTEOL0
Shell connectionISOLATED
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage160 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)15 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Ordering number:ENN2535
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1606/2SC4159
High-Voltage Switching, AF 100W
Driver Applications
Applications
· High-voltage switching, AF power amplifier, 100W
output predrivers.
Package Dimensions
unit:mm
2041A
[2SA1606/2SC4159]
4.5
2.8
Features
· Micaless package facilitating mounting.
3.2
10.0
3.5
7.2
16.0
18.1
5.6
14.0
1.6
1.2
0.75
1 2
3
2.55
2.4
0.7
2.55
( ) : 2SA1606
2.55
2.55
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
2.4
Ratings
(–)180
(–)160
(–)6
(–)1.5
Unit
V
V
V
A
A
W
Tc=25˚C
(–)3
15
150
–55 to +150
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Base-to-Emitter Voltage
Symbol
ICBO
IEBO
hFE
fT
Cob
VBE
VCB=(–)120V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)300mA
VCE=(–)10V, IC=(–)50mA
VCB=(–)10V, f=1MHz
VCE=(–)5V, IC=(–)10mA
60*
100
(30)23
(–)1.5
Conditions
Ratings
min
typ
max
(–)10
(–)10
200*
MHz
pF
V
Unit
µA
µA
* : The 2SA1606/2SC4159 are classified by 300mA h
FE
as follows :
Rank
hFE
D
60 to 120
E
100 to 200
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1003TN (KT)/5277TA No.2535-1/4

2SC4159-E Related Products

2SC4159-E 2SA1606-D 2SA1606-E 2SC4159-D
Description Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220ML, 3 PIN Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-220ML, 3 PIN Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-220ML, 3 PIN 1.5A, 160V, NPN, Si, POWER TRANSISTOR, TO-220ML, 3 PIN
Parts packaging code TO-220ML TO-220ML TO-220ML TO-220ML
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 TO-220ML, 3 PIN
Contacts 3 3 3 3
Reach Compliance Code unknown unknow unknow unknown
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 1.5 A 1.5 A 1.5 A 1.5 A
Collector-emitter maximum voltage 160 V 160 V 160 V 160 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 60 100 60
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 140 °C 140 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN PNP PNP NPN
Maximum power dissipation(Abs) 15 W 15 W 15 W 15 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz
ECCN code EAR99 EAR99 EAR99 -
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