Ordering number:ENN2535
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1606/2SC4159
High-Voltage Switching, AF 100W
Driver Applications
Applications
· High-voltage switching, AF power amplifier, 100W
output predrivers.
Package Dimensions
unit:mm
2041A
[2SA1606/2SC4159]
4.5
2.8
Features
· Micaless package facilitating mounting.
3.2
10.0
3.5
7.2
16.0
18.1
5.6
14.0
1.6
1.2
0.75
1 2
3
2.55
2.4
0.7
2.55
( ) : 2SA1606
2.55
2.55
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
2.4
Ratings
(–)180
(–)160
(–)6
(–)1.5
Unit
V
V
V
A
A
W
Tc=25˚C
(–)3
15
150
–55 to +150
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Base-to-Emitter Voltage
Symbol
ICBO
IEBO
hFE
fT
Cob
VBE
VCB=(–)120V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)300mA
VCE=(–)10V, IC=(–)50mA
VCB=(–)10V, f=1MHz
VCE=(–)5V, IC=(–)10mA
60*
100
(30)23
(–)1.5
Conditions
Ratings
min
typ
max
(–)10
(–)10
200*
MHz
pF
V
Unit
µA
µA
* : The 2SA1606/2SC4159 are classified by 300mA h
FE
as follows :
Rank
hFE
D
60 to 120
E
100 to 200
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1003TN (KT)/5277TA No.2535-1/4
2SA1606/2SC4159
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
Turn-ON Time
Fall Time
Storage Time
Symbol
VCE(sat)
Conditions
IC=(–)500mA, IB=(–)50mA
(–)180
(–)160
(–)6
(0.29)
0.15
(0.19)
0.48
(0.48)
0.81
Ratings
min
typ
(–0.5)
0.3
max
Unit
V
V
V
V
V
µs
µs
µs
µs
µs
µs
V(BR)CBO IC=(–)1mA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO IE=(–)1mA, IC=0
ton
tf
tstg
See specified test circuit.
See specified test circuit.
See specified test circuit.
See specified test circuit.
See specified test circuit.
See specified test circuit.
Switching Time Test Circuit
IB1
INPUT
51Ω
1µF
VBE=--2V
1µF
VCC=20V
1k
IB2
200VR
OUTPUT
40kΩ
10IB1= --10IB2= IC=0.5A
PW=20µs
For PNP, the polarity is reversed.
--1.0
IC -- VCE
2SA1606
1.0
IC -- VCE
2SC4159
A
8m
7mA
6mA
5mA
--0.8
Collector Current, IC – A
--0.6
--7mA
--6mA
--5mA
--4mA
Collector Current, IC – A
--8mA
0.8
0.6
4mA
0.4
--0.4
--3mA
--2mA
--0.2
3mA
2mA
0.2
--1mA
0
0
--10
--20
--30
--40
1mA
IB=0
--50
0
0
10
20
30
40
IB=0
50
ITR04028
Collector-to-Emitter Voltage, VCE – V
--2.4
ITR04027
2.4
Collector-to-Emitter Voltage, VCE – V
IC -- VBE
2SA1606
VCE=--5V
IC -- VBE
2SC4159
VCE=5V
--2.0
2.0
Collector Current, IC – A
--1.6
Collector Current, IC – A
1.6
75
°
--1.2
1.2
C
12
5
°
--0.8
0.8
25
°
C
--25
°
C
Ta
=
0.4
0
0
0.2
0.4
0.6
12
5
°
0.8
C
75
°
C
C
--0.4
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
2 5
°
C
--25
°
C
1.0
Ta
=
1.2
1.4
Base-to-Emitter Voltage, VBE – V
ITR04029
Base-to-Emitter Voltage, VBE – V
ITR04030
No.2535-2/4
2SA1606/2SC4159
1000
5
3
2
hFE -- IC
2SA1606
VCE=--5V
1000
5
3
2
hFE -- IC
2SC4159
VCE=5V
75°C
DC Current Gain, hFE
DC Current Gain, hFE
Ta=125
°C
Ta=125
°
C
25
°
C
100
5
3
2
10
5
3
2
1.0
7 --0.01
2
75°C
25°C
--25°C
100
5
3
2
10
5
3
2
1.0
--25
°
C
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Collector Current, IC – A
3
ITR04031
5
f T -- IC
Collector Current, IC – A
ITR04032
Cob -- VCB
Gain-Bandwidth Product, fT – MHz
2
VCE=10V
Output Capacitance, Cob – pF
f=1MHz
3
2
100
7
5
3
2
10
7
5
3
2
1.0
2
3
5
100
7
5
3
2
2SC
415
9
1
2SA
606
2SA1
606
2SC4
159
10
7
5
3
0.001
(For PNP, minus sign is omitted.)
2
3
5 7 0.01
2
3
5 7 0.1
2
3
(For PNP, minus sign is omitted.)
7
10
2
3
5
Collector Current, IC – A
10
7
5
5 7 1.0
ITR04033
VCE(sat) -- IC
Collector-to-Base Voltage, VCB -- V
7 100
ITR04034
ASO
10
IC / IB=10
5
3
2
ICP=3.0A
100
1m
Collector-to-Emitter
Saturation Voltage, VCE (sat) –V
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
IC=1.5A
DC
m
µ
s
s
Collector Current, IC – A
s
ion
1.0
7
5
3
2
0.1
7
5
3
2
op
era
t
2
1
SA
606
159
C4
2S
(For PNP, minus sign is omitted.)
2
3
5
7 0.1
2
3
5
7
1.0
2
3
0.01
1.0
2SA1606 / 2SC4159
Ta=25°C
Single pulse
(For PNP, minus sign is omitted.)
2
3
5
7
10
2
3
5
7 100
2
3
Collector Current, IC – A
18
16
ITR04035
Collector-to-Emitter Voltage, VCE – V
ITR04036
PC -- Ta
2SA1606 / 2SC4159
Collector Dissipation, P
C
– W
14
12
10
8
6
4
2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR04037
No.2535-3/4
2SA1606/2SC4159
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2003. Specifications and information herein are subject
to change without notice.
PS No.2535-4/4
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