NDP6030L datasheet, PDF - EEWORLD Datasheet

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NDP6030L: Description52A, 30V, 0.0135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size155KB，6 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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NDP6030L Overview

52A, 30V, 0.0135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN

NDP6030L Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Texas Instruments
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	100 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	52 A
Maximum drain current (ID)	52 A
Maximum drain-source on-resistance	0.0135 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	75 W
Maximum power dissipation(Abs)	75 W
Maximum pulsed drain current (IDM)	156 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	290 ns
Maximum opening time (tons)	266 ns

NDP6030L Related Products

	NDP6030L	NDB6030L/S62Z	NDB6030L/L86Z	NDP6030L/J69Z	NDB6030L/L99Z	NDB6030L
Description	52A, 30V, 0.0135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN	52A, 30V, 0.0135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	52A, 30V, 0.0135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	52A, 30V, 0.0135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN	52A, 30V, 0.0135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	52A, 30V, 0.0135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Maker	Texas Instruments	Texas Instruments	Texas Instruments	Texas Instruments	Texas Instruments	Texas Instruments
package instruction	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	100 mJ	100 mJ	100 mJ	100 mJ	100 mJ	100 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V	30 V	30 V	30 V	30 V
Maximum drain current (ID)	52 A	52 A	52 A	52 A	52 A	52 A
Maximum drain-source on-resistance	0.0135 Ω	0.0135 Ω	0.0135 Ω	0.0135 Ω	0.0135 Ω	0.0135 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	TO-263AB	TO-263AB	TO-220AB	TO-263AB	TO-263AB
JESD-30 code	R-PSFM-T3	R-PSSO-G2	R-PSSO-G2	R-PSFM-T3	R-PSSO-G2	R-PSSO-G2
Number of components	1	1	1	1	1	1
Number of terminals	3	2	2	3	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	SMALL OUTLINE	SMALL OUTLINE	FLANGE MOUNT	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	75 W	75 W	75 W	75 W	75 W	75 W
Maximum pulsed drain current (IDM)	156 A	156 A	156 A	156 A	156 A	156 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	YES	YES	NO	YES	YES
Terminal form	THROUGH-HOLE	GULL WING	GULL WING	THROUGH-HOLE	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maximum off time (toff)	290 ns	290 ns	290 ns	290 ns	290 ns	290 ns
Maximum opening time (tons)	266 ns	266 ns	266 ns	266 ns	266 ns	266 ns
Shell connection	-	DRAIN	DRAIN	-	DRAIN	DRAIN

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