52A, 30V, 0.0135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
| Parameter Name | Attribute value |
| Maker | Texas Instruments |
| package instruction | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Other features | LOGIC LEVEL COMPATIBLE |
| Avalanche Energy Efficiency Rating (Eas) | 100 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 30 V |
| Maximum drain current (ID) | 52 A |
| Maximum drain-source on-resistance | 0.0135 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-263AB |
| JESD-30 code | R-PSSO-G2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 75 W |
| Maximum pulsed drain current (IDM) | 156 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 290 ns |
| Maximum opening time (tons) | 266 ns |
| NDB6030L/L99Z | NDB6030L/S62Z | NDB6030L/L86Z | NDP6030L | NDP6030L/J69Z | NDB6030L | |
|---|---|---|---|---|---|---|
| Description | 52A, 30V, 0.0135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 52A, 30V, 0.0135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 52A, 30V, 0.0135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 52A, 30V, 0.0135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | 52A, 30V, 0.0135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | 52A, 30V, 0.0135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| Maker | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| package instruction | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Other features | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE |
| Avalanche Energy Efficiency Rating (Eas) | 100 mJ | 100 mJ | 100 mJ | 100 mJ | 100 mJ | 100 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V |
| Maximum drain current (ID) | 52 A | 52 A | 52 A | 52 A | 52 A | 52 A |
| Maximum drain-source on-resistance | 0.0135 Ω | 0.0135 Ω | 0.0135 Ω | 0.0135 Ω | 0.0135 Ω | 0.0135 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-263AB | TO-263AB | TO-263AB | TO-220AB | TO-220AB | TO-263AB |
| JESD-30 code | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSFM-T3 | R-PSFM-T3 | R-PSSO-G2 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 3 | 3 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | FLANGE MOUNT | FLANGE MOUNT | SMALL OUTLINE |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power consumption environment | 75 W | 75 W | 75 W | 75 W | 75 W | 75 W |
| Maximum pulsed drain current (IDM) | 156 A | 156 A | 156 A | 156 A | 156 A | 156 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | NO | NO | YES |
| Terminal form | GULL WING | GULL WING | GULL WING | THROUGH-HOLE | THROUGH-HOLE | GULL WING |
| Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Maximum off time (toff) | 290 ns | 290 ns | 290 ns | 290 ns | 290 ns | 290 ns |
| Maximum opening time (tons) | 266 ns | 266 ns | 266 ns | 266 ns | 266 ns | 266 ns |
| Shell connection | DRAIN | DRAIN | DRAIN | - | - | DRAIN |
京公网安备 11010802033920号
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