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MG50Q6ES1

Description
TRANSISTOR 50 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor
CategoryDiscrete semiconductor    The transistor   
File Size48KB,1 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

MG50Q6ES1 Overview

TRANSISTOR 50 A, 1200 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor

MG50Q6ES1 Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionFLANGE MOUNT, R-PUFM-X19
Reach Compliance Codeunknown
Other featuresHIGH SPEED
Maximum collector current (IC)50 A
Collector-emitter maximum voltage1200 V
ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Maximum landing time (tf)500 ns
JESD-30 codeR-PUFM-X19
Number of components6
Number of terminals19
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
VCEsat-Max4 V
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