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2SD1816T

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size139KB,4 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric Compare View All

2SD1816T Overview

Transistor

2SD1816T Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompli
Maximum collector current (IC)4 A
ConfigurationSingle
Minimum DC current gain (hFE)200
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)20 W
surface mountYES
Base Number Matches1
UTC 2SD1816
NPN EPITAXIAL PLANAR TRANSISTOR
HIGH CURRENT SWITCHIG
APPLICATIONS
FEATURES
*Low collector-to-emitter saturation voltage
*Good linearity of hFE
*Small and slim package facilitating compactness of sets .
*High f
T
*Fast switching speed
1
APPLICATION
*Suitable for relay drivers, high-speed inverters,
converters, and other general high-current switching
applications.
TO-252
1: BASE
2: COLLECTOR
3: EMITTER
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
PULSE(Note 1)
Collector Power Dissipation
SYMBOL
V
CBO
V
CEO
V
EBO
Ic
Pc
VALUE
120
100
6
4
8
1
(T
C
=25°C) 20 (Note 2)
150
-55 ~ +150
UNIT
V
V
V
A
A
W
W
°C
°C
Junction Temperature
T
J
Storage Temperature
T
STG
Note1: Duty=1/2,Pw=20ms
Note2: When mounted on a 40*40*0.7 mm ceramic board
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
TEST CONDITIONS
Ic=10μA,I
E
=0
Ic=1mA,R
B
=∞
I
E
=10μA,I
C
=0
V
CB
= 100 V,I
E
=0
V
EB
= 4 V,I
C
=0
V
CE
= 5 V,Ic= 0.5 A
V
CE
=5 V,Ic= 3 A
Ic= 2 A, I
B
=0.2 A
Ic= 2 A, I
B
= 0.2A
MIN
120
100
6
TYP
MAX
UNIT
V
V
V
μA
μA
70
40
150
0.9
1
1
400
400
1.2
mV
V
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R209-011,A

2SD1816T Related Products

2SD1816T 2SD1816R 2SD1816S
Description Transistor Transistor Transistor
Reach Compliance Code compli compli compli
Maximum collector current (IC) 4 A 4 A 4 A
Configuration Single Single Single
Minimum DC current gain (hFE) 200 100 140
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 20 W 20 W 20 W
surface mount YES YES YES
Base Number Matches 1 1 1
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