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Datasheet> All Categories > Discrete semiconductor> The transistor> 2SD1819A-Q
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2SD1819A-Q

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size339KB，2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
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2SD1819A-Q Overview

Small Signal Bipolar Transistor

2SD1819A-Q Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompli
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)160
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1

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Download Datasheet
2SD1819A
Elektronische Bauelemente
24
0.1A , 60V
NPN Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
High DC Current Gain.
Low collector to emitter saturation voltage V
CE(sat)
.
Complementary to 2SB1218A
A
L
3
SOT-323
3
Top View
C B
1
2
2
APPLICATION
General purpose amplification.
1
K
E
D
F
G
H
J
CLASSIFICATION OF h
FE
Product-Rank
Range
Marking
2SD1819A-Q 2SD1819A-R 2SD1819A-S
160~260
ZQ
210~340
ZR
290~460
ZS
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.20
1.40
0.20
0.40
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
-
-
0.650 TYP.
PACKAGE INFORMATION
Package
SOT-323
MPQ
3K
LeaderSize
7’ inch
Base
Collector
3
1
Emitter
2
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction & Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Rating
60
50
7
100
150
833
150, -55~150
Unit
V
V
V
mA
mW
° /W
C
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Base Cut-Off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
http://www.SeCoSGmbH.com/
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE (1)
h
FE (2)
V
CE(sat)
f
T
C
ob
Min.
60
50
7
-
-
-
160
90
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
150
3.5
Max.
-
-
-
0.1
100
0.1
460
-
0.3
-
-
Unit
V
V
V
µA
µA
µA
Test Conditions
I
C
=10µA, I
E
=0
I
C
=2mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=20V, I
E
=0
V
CE
=10V, I
B
=0
V
EB
=7V, I
C
=0
V
CE
=10V, I
C
=2mA
V
CE
=2V, I
C
=100mA
I
C
=100mA, I
B
=10mA
V
CE
=10V, I
C
=2mA, f=200MHz
V
CB
=10V, I
E
=0, f=1MHz
Any changes of specification will not be informed individually.
V
MHz
pF
24-Feb-2011
Rev. B
Page 1 of 2

2SD1819A-Q Related Products

2SD1819A-Q 2SD1819A-Q-C 2SD1819A-R-C 2SD1819A-R 2SD1819A-S 2SD1819A-S-C 2SD1819A-C
Description Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor Small Signal Bipolar Transistor
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compli compli compli compli compli compli compli
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 160 160 210 210 290 290 90
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN
surface mount YES YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz
Base Number Matches 1 1 1 1 1 1 1

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