2SD1819A-Q-C datasheet, PDF - EEWORLD Datasheet

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2SD1819A-Q-C: DescriptionSmall Signal Bipolar Transistor; CategoryDiscrete semiconductor The transistor; File Size339KB，2 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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2SD1819A-Q-C Overview

Small Signal Bipolar Transistor

2SD1819A-Q-C Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compli
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	160
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
Base Number Matches	1

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2SD1819A

Elektronische Bauelemente

0.1A , 60V

NPN Plastic-Encapsulate Transistor

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

High DC Current Gain.

Low collector to emitter saturation voltage V

CE(sat)

Complementary to 2SB1218A

SOT-323

Top View

C B

APPLICATION

General purpose amplification.

CLASSIFICATION OF h

Product-Rank

Range

Marking

2SD1819A-Q 2SD1819A-R 2SD1819A-S

160~260

210~340

290~460

REF.

Millimeter

Min.

Max.

1.80

2.20

1.80

2.45

1.15

1.35

0.80

1.10

1.20

1.40

0.20

0.40

REF.

Millimeter

Min.

Max.

0.100 REF.

0.525 REF.

0.08

0.25

0.650 TYP.

PACKAGE INFORMATION

Package

SOT-323

MPQ

LeaderSize

7’ inch

Base

Collector

Emitter

ABSOLUTE MAXIMUM RATINGS

= 25°C unless otherwise specified)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction to Ambient

Junction & Storage temperature

Symbol

CBO

CEO

EBO

θJA

, T

STG

Rating

100

150

833

150, -55~150

Unit

° /W

°C

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Base Cut-Off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

http://www.SeCoSGmbH.com/

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CBO

CEO

EBO

FE (1)

FE (2)

CE(sat)

Min.

160

Typ.

150

3.5

Max.

0.1

100

0.1

460

0.3

Unit

µA

Test Conditions

=10µA, I

=2mA, I

=10µA, I

=20V, I

=10V, I

=7V, I

=10V, I

=2mA

=2V, I

=100mA

=100mA, I

=10mA

=10V, I

=2mA, f=200MHz

=10V, I

=0, f=1MHz

Any changes of specification will not be informed individually.

MHz

24-Feb-2011

Rev. B

Page 1 of 2

2SD1819A-Q-C Related Products

	2SD1819A-Q-C	2SD1819A-Q	2SD1819A-R-C	2SD1819A-R	2SD1819A-S	2SD1819A-S-C	2SD1819A-C
Description	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compli
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	160	160	210	210	290	290	90
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN
surface mount	YES	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz
Base Number Matches	1	1	1	1	1	1	1

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