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2SB829R

Description
TRANSISTOR 15 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size118KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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2SB829R Overview

TRANSISTOR 15 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN, BIP General Purpose Power

2SB829R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid1383293898
Parts packaging codeTO-218
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
YTEOL0
Maximum collector current (IC)15 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-218
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
Ordering number:825C
PNP/NPN Epitaxial Planar Silicon Tranasistors
2SB829/2SD1065
50V/15A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters, and
other general high-current switching applications.
Package Dimensions
unit:mm
2022A
[2SD829/2SD1065]
Features
· Low-saturation collector-to-emitter voltage :
V
CE(sat)
=–0.5V max.
· Wide ASO leading to high resistance to breakdown.
( ) : 2SB829
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Ratings
(–)60
(–)50
(–)6
(–)15
(–)20
Unit
V
V
V
A
A
W
˚C
Tc=25˚C
90
150
–55 to +150
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Symbol
ICBO
IEBO
hFE1
hFE2
fT
VCE(sat)
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
VCE=(–)2V, IC=(–)8A
VCE=(–)5V, IC=(–)1A
IC=(–)8A, IB=(–)0.4A
70*
30
20
(–0.26)
0.18
(–0.5)
0.4
MHz
V
V
Conditions
Ratings
min
ty p
max
(–)0.1
(–)0.1
280*
Unit
mA
mA
* : The 2SB829/2SD1065 are classified by 1A h
FE
as follows :
70
Q
140
100
R
200
140
S
280
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/10996TS (KOTO) 8-3880/4017KI/3145KI No.825–1/4

2SB829R Related Products

2SB829R 2SD1065R
Description TRANSISTOR 15 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN, BIP General Purpose Power 15A, 50V, NPN, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN
Is it Rohs certified? conform to conform to
Parts packaging code TO-218 TO-218
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 2 2
Reach Compliance Code compliant unknow
ECCN code EAR99 EAR99
Maximum collector current (IC) 15 A 15 A
Collector-emitter maximum voltage 50 V 50 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 100 100
JEDEC-95 code TO-218 TO-218
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type PNP NPN
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 20 MHz 20 MHz

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