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MAT02BIFH

Description
Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,
CategoryDiscrete semiconductor    The transistor   
File Size545KB,12 Pages
ManufacturerPrecision Monolithics Inc
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MAT02BIFH Overview

Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,

MAT02BIFH Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Other featuresLOW NOISE
Maximum collector current (IC)0.02 A
Collector-emitter maximum voltage40 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum DC current gain (hFE)400
JEDEC-95 codeTO-78
JESD-30 codeO-MBCY-W6
Number of components2
Number of terminals6
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1

MAT02BIFH Related Products

MAT02BIFH MAT02EH MAT02AH MAT02AH/883 MAT02BRC/883 MAT-02N MAT02FH MAT02BIEH
Description Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78, Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78, Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78, Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78, Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78, Small Signal Bipolar Transistor, 0.02A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78,
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
Other features LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE
Maximum collector current (IC) 0.02 A 0.02 A 0.02 A 0.02 A 0.02 A 0.02 A 0.02 A 0.02 A
Collector-emitter maximum voltage 40 V 40 V 40 V 40 V 40 V 40 V 40 V 40 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum DC current gain (hFE) 400 500 500 500 400 400 400 500
JESD-30 code O-MBCY-W6 O-MBCY-W6 O-MBCY-W6 O-MBCY-W6 S-PQCC-N20 R-XUUC-N7 O-MBCY-W6 O-MBCY-W6
Number of components 2 2 2 2 2 2 2 2
Number of terminals 6 6 6 6 20 7 6 6
Package body material METAL METAL METAL METAL PLASTIC/EPOXY UNSPECIFIED METAL METAL
Package shape ROUND ROUND ROUND ROUND SQUARE RECTANGULAR ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CHIP CARRIER UNCASED CHIP CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO YES YES NO NO
Terminal form WIRE WIRE WIRE WIRE NO LEAD NO LEAD WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM QUAD UPPER BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz
JEDEC-95 code TO-78 TO-78 TO-78 TO-78 - - TO-78 TO-78
Base Number Matches 1 1 1 1 1 - - -
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