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2SD1760F5TLPQ

Description
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
CategoryDiscrete semiconductor    The transistor   
File Size132KB,4 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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2SD1760F5TLPQ Overview

Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,

2SD1760F5TLPQ Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)82
JESD-30 codeR-PSSO-G2
JESD-609 codee2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power consumption environment15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN COPPER
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature10
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)90 MHz
VCEsat-Max1 V
Base Number Matches1

2SD1760F5TLPQ Related Products

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Description Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Reach Compliance Code compli compli compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 3 A 3 A 3 A 3 A 3 A 3 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V 50 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 82 120 82 120 82 180
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSSO-G2
JESD-609 code e2 e2 e2 e2 e2 e2
Number of components 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260
Polarity/channel type NPN NPN NPN NPN NPN NPN
Maximum power consumption environment 15 W 15 W 15 W 15 W 15 W 15 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal surface TIN COPPER TIN COPPER TIN COPPER TIN COPPER TIN COPPER TIN COPPER
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature 10 10 10 10 10 10
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 90 MHz 90 MHz 90 MHz 90 MHz 90 MHz 90 MHz
VCEsat-Max 1 V 1 V 1 V 1 V 1 V 1 V
Base Number Matches 1 1 1 1 1 1

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