EEWORLDEEWORLDEEWORLD

Part Number

Search

MT4C4001JEC-7/883C

Description
Fast Page DRAM, 1MX4, 70ns, CMOS, CDSO20, CERAMIC, LCC-20
Categorystorage    storage   
File Size445KB,13 Pages
ManufacturerMicross
Websitehttps://www.micross.com
Download Datasheet Parametric Compare View All

MT4C4001JEC-7/883C Overview

Fast Page DRAM, 1MX4, 70ns, CMOS, CDSO20, CERAMIC, LCC-20

MT4C4001JEC-7/883C Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicross
Parts packaging codeDLCC
package instructionSON,
Contacts20
Reach Compliance Codecompliant
ECCN codeEAR99
access modeFAST PAGE
Maximum access time70 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 codeR-CDSO-N20
JESD-609 codee0
length17.145 mm
memory density4194304 bit
Memory IC TypeFAST PAGE DRAM
memory width4
Number of functions1
Number of ports1
Number of terminals20
word count1048576 words
character code1000000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize1MX4
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeSON
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height1.93 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width8.89 mm

MT4C4001JEC-7/883C Related Products

MT4C4001JEC-7/883C 5962-9084703MYA 5962-9084701MYA 5962-9084701MYX 5962-9084703MYX 5962-9084702MYX MT4C4001JEC-8/883C MT4C4001JEC-12/883C MT4C4001JEC-10/883C
Description Fast Page DRAM, 1MX4, 70ns, CMOS, CDSO20, CERAMIC, LCC-20 Fast Page DRAM, 1MX4, 80ns, CMOS, CQCC20, CERAMIC, LCC-20 Fast Page DRAM, 1MX4, 120ns, CMOS, CQCC20, CERAMIC, LCC-20 Fast Page DRAM, 1MX4, 120ns, CMOS, CDSO20, CERAMIC, LCC-20 Fast Page DRAM, 1MX4, 80ns, CMOS, CDSO20, CERAMIC, LCC-20 Fast Page DRAM, 1MX4, 100ns, CMOS, CDSO20, CERAMIC, LCC-20 Fast Page DRAM, 1MX4, 80ns, CMOS, CDSO20, CERAMIC, LCC-20 Fast Page DRAM, 1MX4, 120ns, CMOS, CDSO20, CERAMIC, LCC-20 Fast Page DRAM, 1MX4, 100ns, CMOS, CDSO20, CERAMIC, LCC-20
Parts packaging code DLCC QLCC QLCC DLCC DLCC DLCC DLCC DLCC DLCC
package instruction SON, QCCN, SOLCC20/26,.4 QCCN, SOLCC20/26,.4 SON, SON, SON, SON, SON, SON,
Contacts 20 20 20 20 20 20 20 20 20
Reach Compliance Code compliant unknown unknown compliant compliant compliant unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
access mode FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE FAST PAGE
Maximum access time 70 ns 80 ns 120 ns 120 ns 80 ns 100 ns 80 ns 120 ns 100 ns
Other features RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 code R-CDSO-N20 R-CQCC-N20 R-CQCC-N20 R-CDSO-N20 R-CDSO-N20 R-CDSO-N20 R-CDSO-N20 R-CDSO-N20 R-CDSO-N20
JESD-609 code e0 e0 e0 e4 e4 e4 e4 e4 e4
length 17.145 mm 17.775 mm 17.775 mm 17.145 mm 17.145 mm 17.145 mm 17.145 mm 17.145 mm 17.145 mm
memory density 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit 4194304 bit
Memory IC Type FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM FAST PAGE DRAM
memory width 4 4 4 4 4 4 4 4 4
Number of functions 1 1 1 1 1 1 1 1 1
Number of ports 1 1 1 1 1 1 1 1 1
Number of terminals 20 20 20 20 20 20 20 20 20
word count 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words 1048576 words
character code 1000000 1000000 1000000 1000000 1000000 1000000 1000000 1000000 1000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
organize 1MX4 1MX4 1MX4 1MX4 1MX4 1MX4 1MX4 1MX4 1MX4
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
encapsulated code SON QCCN QCCN SON SON SON SON SON SON
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE CHIP CARRIER CHIP CARRIER SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.93 mm 2.54 mm 2.54 mm 1.93 mm 1.93 mm 1.93 mm 1.93 mm 1.93 mm 1.93 mm
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
surface mount YES YES YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY
Terminal surface TIN LEAD TIN LEAD TIN LEAD PALLADIUM GOLD PALLADIUM GOLD PALLADIUM GOLD PALLADIUM GOLD PALLADIUM GOLD PALLADIUM GOLD
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL QUAD QUAD DUAL DUAL DUAL DUAL DUAL DUAL
width 8.89 mm 10.16 mm 10.16 mm 8.89 mm 8.89 mm 8.89 mm 8.89 mm 8.89 mm 8.89 mm
Maker Micross Micross Micross - Micross Micross Micross Micross Micross
Output characteristics - 3-STATE 3-STATE - - - 3-STATE 3-STATE 3-STATE
refresh cycle - 1024 1024 - - - 1024 1024 1024
Filter level - MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 MIL-STD-883 - - -
General recovery methods for errors caused by firmware updates on MSP-FET430UIF
I don't know if there is a problem with my emulator version or what the reason is. When IAR 5.5 prompted to upgrade the firmware, I clicked YES and the upgrade progress popped up. Halfway through, it ...
fish001 Microcontroller MCU
The difference between reduced instruction set and complex instruction set
RISC (Reduced Instruction Set Computer) and CISC (Complex Instruction Set Computer) are two architectures of current CPUs. The difference between them lies in different CPU design concepts and methods...
Jacktang Microcontroller MCU
If the temperature is too high during manual soldering of Ferroelectric's MSP430, will the data be lost or damaged?
Watch the video of the 430FR5739 series. If the temperature is too high during manual soldering, will it cause data loss, shorten the effective time, or damage the device and make it unusable? The vid...
wangfuchong Microcontroller MCU
Recruiting AE (Application Engineer) Manager - Motor Drive Direction 20-25K/month*14
Shenzhen Tingbao Technology Co., Ltd. is recruiting~!Position Title: AE (Application Engineer) Manager - Motor DriveSalary range: 20-25K/month*14Work Location: ShenzhenJob Responsibilities: 1. Respons...
Teampo Recruitment
Which mode should the USBOTG pin be set to when initializing?
I want to use the USB OTG of STM32F105VC and plan to use the master mode. When initializing USBDM and USBDP , what mode should I choose for GPIO_InitStructure.GPIO_Mode?typedef enum{ GPIO_Mode_AIN = 0...
dangelzsp stm32/stm8
Please advise, how to use inductors and capacitors to attenuate the output of the power amplifier (instead of resistor attenuation)
I have a question. I have an amplifier with an output of 100W, but the output S22 is a little bit below the standard, mainly because the bandwidth is too large. I tried 3dB attenuation with resistors ...
voco_2000 RF/Wirelessly

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2807  167  2252  786  12  57  4  46  16  1 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号