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PN3645-D28Z

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size295KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

PN3645-D28Z Overview

Transistor

PN3645-D28Z Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.5 A
ConfigurationSingle
Minimum DC current gain (hFE)80
JESD-609 codee0
Maximum operating temperature140 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.6 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)200 MHz
PN3645
Discrete POWER & Signal
Technologies
PN3645
C
BE
TO-92
PNP General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA. Sourced
from Process 63. See PN2907A for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage
Value
60
60
5.0
800
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θ
JA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
PN3645
625
5.0
83.3
200
Units
mW
mW/
°
C
°
C/W
°C/W
©
1997 Fairchild Semiconductor Corporation

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