N08L163WC2AB2-85I datasheet, PDF

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N08L163WC2AB2-85I: DescriptionStandard SRAM, 512KX16, 85ns, CMOS, PBGA48, GREEN, BGA-48; Categorystorage storage; File Size181KB，10 Pages; ManufacturerAMI Semiconductor; Environmental Compliance

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N08L163WC2AB2-85I Overview

Standard SRAM, 512KX16, 85ns, CMOS, PBGA48, GREEN, BGA-48

N08L163WC2AB2-85I Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	AMI Semiconductor
package instruction	GREEN, BGA-48
Reach Compliance Code	unknown
Maximum access time	85 ns
JESD-30 code	R-PBGA-B48
JESD-609 code	e1
length	10 mm
memory density	8388608 bit
Memory IC Type	STANDARD SRAM
memory width	16
Number of functions	1
Number of terminals	48
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.3 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
width	8 mm

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AMI Semiconductor, Inc.

ULP Memory Solutions

670 North McCarthy Blvd. Suite 220

Milpitas, CA 95035

PH: 408-935-7777, FAX: 408-935-7770

N08L163WC2A

8Mb Ultra-Low Power Asynchronous CMOS SRAM

512K × 16 bit

Overview

The N08L163WC2A is an integrated memory

device containing a 8 Mbit Static Random Access

Memory organized as 524,288 words by 16 bits.

The device is designed and fabricated using AMI

Semiconductor’s advanced CMOS technology to

provide both high-speed performance and ultra-low

power. The device operates with two chip enable

(CE1 and CE2) controls and output enable (OE) to

allow for easy memory expansion. Byte controls

(UB and LB) allow the upper and lower bytes to be

accessed independently and can also be used to

deselect the device. The N08L163WC2A is optimal

for various applications where low-power is critical

such as battery backup and hand-held devices.

The device can operate over a very wide

temperature range of -40

C to +85

C and is

available in JEDEC standard packages compatible

with other standard 512Kb x 16 SRAMs

Features

• Single Wide Power Supply Range

2.3 to 3.6 Volts

• Very low standby current

4.0µA at 3.0V (Typical)

• Very low operating current

2.0mA at 3.0V and 1µs(Typical)

• Very low Page Mode operating current

1.0mA at 3.0V and 1µs (Typical)

• Simple memory control

Dual Chip Enables (CE1 and CE2)

Byte control for independent byte operation

Output Enable (OE) for memory expansion

• Low voltage data retention

Vcc = 1.8V

• Very fast output enable access time

25ns OE access time

• Very fast Page Mode access time

AAP

= 25ns

• Automatic power down to standby mode

• TTL compatible three-state output driver

• RoHS Compliant

Product Family

Part Number

N08L163WC2AB

N08L163WC2AB2

Package Type

48 - BGA

48 - BGA Green

Operating

Temperature

Power

Supply

(Vcc)

Speed

Standby

Operating

Current (I

), Current (Icc),

Typical

µA

2 mA @ 1MHz

70ns@2.7V

-40

C to +85

C 2.3V - 3.6V 85ns @ 2.3V

Pin Configuration

I/O

Pin Descriptions

CE2

I/O

CE1

I/O

Pin Name

-A

CE1, CE2

I/O

-I/O

Pin Function

Address Inputs

Write Enable Input

Chip Enable Input

Output Enable Input

Lower Byte Enable Input

Upper Byte Enable Input

Data Inputs/Outputs

Power

Ground

Not Connected

I/O

48 Pin BGA (top)

8 x 10 mm

(DOC# 14-02-020 REV G ECN# 01-1281)

The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.

N08L163WC2AB2-85I Related Products

	N08L163WC2AB2-85I	N08L163WC2AB2-70I	N08L163WC2AB-70I	N08L163WC2AB-85I
Description	Standard SRAM, 512KX16, 85ns, CMOS, PBGA48, GREEN, BGA-48	Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, GREEN, BGA-48	Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, BGA-48	Standard SRAM, 512KX16, 85ns, CMOS, PBGA48, BGA-48
Is it Rohs certified?	conform to	conform to	incompatible	incompatible
Maker	AMI Semiconductor	AMI Semiconductor	AMI Semiconductor	AMI Semiconductor
package instruction	GREEN, BGA-48	GREEN, BGA-48	BGA-48	BGA-48
Reach Compliance Code	unknown	unknown	unknown	unknown
Maximum access time	85 ns	70 ns	70 ns	85 ns
JESD-30 code	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48
JESD-609 code	e1	e1	e0	e0
length	10 mm	10 mm	10 mm	10 mm
memory density	8388608 bit	8388608 bit	8388608 bit	8388608 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	16	16	16	16
Number of functions	1	1	1	1
Number of terminals	48	48	48	48
word count	524288 words	524288 words	524288 words	524288 words
character code	512000	512000	512000	512000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C
organize	512KX16	512KX16	512KX16	512KX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	TFBGA	TFBGA	TFBGA
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	260	260	240	240
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V
Nominal supply voltage (Vsup)	3 V	3 V	3 V	3 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)	TIN LEAD	TIN LEAD
Terminal form	BALL	BALL	BALL	BALL
Terminal pitch	0.75 mm	0.75 mm	0.75 mm	0.75 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	40	40	30	30
width	8 mm	8 mm	8 mm	8 mm

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