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2SC4210-Y(TE85L)

Description
2SC4210-Y(TE85L)
CategoryDiscrete semiconductor    The transistor   
File Size182KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SC4210-Y(TE85L) Overview

2SC4210-Y(TE85L)

2SC4210-Y(TE85L) Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Base Number Matches1
2SC4210
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC4210
Audio Power Amplifier Applications
High DC current gain: h
FE
= 100~320
Complementary to 2SA1621
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
35
30
5
800
160
200
150
−55~150
Unit
V
V
V
mA
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
JEITA
TOSHIBA
TO-236MOD
SC-59
2-3F1A
Weight: 0.012 g (typ.)
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Symbol
I
CBO
I
EBO
V
(BR) CEO
h
FE (1)
(Note)
h
FE (2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE (sat)
V
BE
f
T
C
ob
Test Condition
V
CB
=
35 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
I
C
=
10 mA, I
B
=
0
V
CE
=
1 V, I
C
=
100 mA
V
CE
=
1 V, I
C
=
700 mA
I
C
=
500 mA, I
B
=
20 mA
V
CE
=
1 V, I
C
=
10 mA
V
CE
=
5 V, I
C
=
10 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
30
100
35
0.5
Typ.
120
13
Max
0.1
0.1
320
0.5
0.8
V
V
MHz
pF
Unit
μA
μA
V
Note: h
FE (1)
classification O: 100~200, Y: 160~320
Marking
1
2007-11-01

2SC4210-Y(TE85L) Related Products

2SC4210-Y(TE85L) 2SC4210-Y(TE85L,F) 2SC4210-O(TE85L) 2SC4210-O(TE85L,F)
Description 2SC4210-Y(TE85L) TRANSISTOR,BJT,NPN,30V V(BR)CEO,800MA I(C),SC-59 TRANSISTOR,BJT,NPN,30V V(BR)CEO,800MA I(C),SC-59 TRANSISTOR,BJT,NPN,30V V(BR)CEO,800MA I(C),SC-59
Reach Compliance Code unknow unknow unknow unknow
Base Number Matches 1 1 1 1
Is it Rohs certified? - conform to incompatible conform to
Maximum collector current (IC) - 0.8 A 0.8 A 0.8 A
Configuration - Single Single Single
Minimum DC current gain (hFE) - 160 100 100
Maximum operating temperature - 150 °C 150 °C 150 °C
Polarity/channel type - NPN NPN NPN
Maximum power dissipation(Abs) - 0.2 W 0.2 W 0.2 W
surface mount - YES YES YES

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