2SC4215-O-TP datasheet, PDF - EEWORLD Datasheet

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2SC4215-O-TP: DescriptionSmall Signal Bipolar Transistor, 0.02A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size329KB，3 Pages; ManufacturerMicro Commercial Components (MCC); Environmental Compliance

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2SC4215-O-TP Overview

Small Signal Bipolar Transistor, 0.02A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3

2SC4215-O-TP Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	0.02 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	70
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.1 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10
Transistor component materials	SILICON
Nominal transition frequency (fT)	550 MHz
Base Number Matches	1

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MCC

Micro Commercial Components

Features

•

omponents

20736

Marilla

Street Chatsworth

!"#

$ % !"#

2SC4215-R

2SC4215-O

2SC4215-Y

Maximum Ratings

Symbol

CEO

CBO

EBO

STG

Halogen

free available upon request by adding suffix "-HF"

Small reverse transfer capacitance: Cre= 0.55pF(typ.)

Low V oise figure: NF=2dB (typ.) (f=100 MHz)

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Collector power dissipation

Junction and Storage Temperature

Rating

100

-55 to +150

Unit

NPN Silicon

Epitaxial Transistors

SOT-323

Electrical Characteristics @ 25

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

Unless Otherwise Specified

Min

Typ

Max

Units

Parameter

Collector -base breakdown voltage

=100

A, I

= 0)

Collector-emitter breakdown voltage

=1mA,

= 0)

Emitter-base breakdown voltage

=100µA, I

= 0)

Collector cut-off current

=40V,I

=0)

Emitter cut-off current

=4V, I

= 0)

DC Current Gain

=6V,I

=1mA)

Collector-base time constant

=6V, Ic=1mA,f=30MHz)

Reverse transfer capacitance

=10V, f=1.0MHz)

Transition frequency

=6V, Ic=1mA,)

CBO

0.1

DIM

DIMENSIONS

INCHES

MIN

MAX

.071

.087

.045

.053

.083

.096

.026 Nominal

.047

.055

.012

.016

.000

.004

.035

.039

.004

.010

.006

.016

MIN

MAX

1.80

2.20

1.15

1.35

2.10

2.45

0.65Nominal

1.20

1.40

.30

.40

.000

.100

.90

1.00

.100

.250

.15

.40

EBO

0.5

NOTE

200

C rbb

0.55

Suggested Solder

Pad Layout

0.70

260

550

MHz

0.90

CLASSIFICATION

Rank

Ramge

Marking

40~80

70~140

100~200

1.90

0.65

Revision:

www.mccsemi.com

1 of 3

2013/09/24

2SC4215-O-TP Related Products

	2SC4215-O-TP	2SC4215-O-TP-HF	2SC4215-R-TP-HF	2SC4215-R-TP	2SC4215-Y-TP-HF	2SC4215-Y-TP
Description	Small Signal Bipolar Transistor, 0.02A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3	Small Signal Bipolar Transistor,	Small Signal Bipolar Transistor,	Small Signal Bipolar Transistor, 0.02A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3	Small Signal Bipolar Transistor,	Small Signal Bipolar Transistor, 0.02A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	compli	compli	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A	0.02 A
Collector-emitter maximum voltage	30 V	30 V	30 V	30 V	30 V	30 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	70	70	40	40	100	100
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	550 MHz	550 MHz	550 MHz	550 MHz	550 MHz	550 MHz
Base Number Matches	1	1	1	1	1	1
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	-	SMALL OUTLINE, R-PDSO-G3

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