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2SC4215-Y-TP

Description
Small Signal Bipolar Transistor, 0.02A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size329KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
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2SC4215-Y-TP Overview

Small Signal Bipolar Transistor, 0.02A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3

2SC4215-Y-TP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.02 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.1 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Nominal transition frequency (fT)550 MHz
Base Number Matches1
MCC
TM
Micro Commercial Components
Features
  omponents
20736
Marilla
Street Chatsworth

  !"#
$ %    !"#
2SC4215-R
2SC4215-O
2SC4215-Y
Maximum Ratings
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
C
T
J,
T
STG
Halogen
free available upon request by adding suffix "-HF"
Small reverse transfer capacitance: Cre= 0.55pF(typ.)
Low V oise figure: NF=2dB (typ.) (f=100 MHz)
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector power dissipation
Junction and Storage Temperature
Rating
30
40
4
20
100
-55 to +150
Unit
V
V
V
mA
mW
NPN Silicon
Epitaxial Transistors
SOT-323
A
D
C
C
Electrical Characteristics @ 25
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Unless Otherwise Specified
Min
40
30
4
Typ
Max
Units
V
V
G
F
E
B
Parameter
Collector -base breakdown voltage
(I
C
=100
µ
A, I
E
= 0)
Collector-emitter breakdown voltage
(I
C
=1mA,
I
B
= 0)
Emitter-base breakdown voltage
(I
E
=100µA, I
c
= 0)
Collector cut-off current
(V
CB
=40V,I
E
=0)
Emitter cut-off current
(V
EB
=4V, I
c
= 0)
DC Current Gain
(V
CE
=6V,I
C
=1mA)
Collector-base time constant
(V
CE
=6V, Ic=1mA,f=30MHz)
Reverse transfer capacitance
(V
CB
=10V, f=1.0MHz)
Transition frequency
(V
CE
=6V, Ic=1mA,)
B
E
H
J
V
K
I
CBO
0.1
µ
A
µ
A
DIM
A
B
C
D
E
F
G
H
J
K
DIMENSIONS
INCHES
MIN
MAX
.071
.087
.045
.053
.083
.096
.026 Nominal
.047
.055
.012
.016
.000
.004
.035
.039
.004
.010
.006
.016
MM
MIN
MAX
1.80
2.20
1.15
1.35
2.10
2.45
0.65Nominal
1.20
1.40
.30
.40
.000
.100
.90
1.00
.100
.250
.15
.40
I
EBO
0.5
NOTE
h
FE
40
200
C
C rbb
25
ps
C
re
0.55
pF
Suggested Solder
Pad Layout
0.70
f
T
260
550
MHz
0.90
h
FE
CLASSIFICATION
Rank
Ramge
Marking
R
40~80
QR
O
70~140
QO
Y
100~200
QY
1.90
mm
0.65
0.65
Revision:
C
www.mccsemi.com
1 of 3
2013/09/24

2SC4215-Y-TP Related Products

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Description Small Signal Bipolar Transistor, 0.02A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3 Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, 0.02A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3 Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, 0.02A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3 Small Signal Bipolar Transistor,
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Reach Compliance Code compli compli compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.02 A 0.02 A 0.02 A 0.02 A 0.02 A 0.02 A
Collector-emitter maximum voltage 30 V 30 V 30 V 30 V 30 V 30 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 70 70 40 40 100
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN NPN NPN
surface mount YES YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 550 MHz 550 MHz 550 MHz 550 MHz 550 MHz 550 MHz
Base Number Matches 1 1 1 1 1 1
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 -
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