Ordering number:ENN2265A
PNP/NPN Epitaxial Planar Type Silicon Transistors
2SB1269/2SD1905
High-Current Switching Applications
Applications
· Suitable for relay drivers, high-speed inverters,
converters, and other general high-current switching
applications.
Package Dimensions
unit:mm
2049C
[2SB1269/2SD1905]
10.2
0.9
Features
· Suitable for sets whose height is restricted.
· Low collector to emitter saturation voltage.
· Wide ASO and highly resistant to breakdown.
20.9
11.5
4.5
1.3
1.6
1.2
9.4
0.8
11.0
8.8
0.4
1
2
3
( ) : 2SB1269
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚C
2.55
2.55
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220MF
Conditions
2.7
Ratings
(–)60
(–)50
(–)6
(–)7
(–)12
1.65
40
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Symbol
ICBO
IEBO
hFE1
hFE2
fT
R
100 to 200
S
140 to 280
Conditions
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
VCE=(–)2V, IC=(–)5A
VCE=(–)5V, IC=(–)1A
Ratings
min
typ
max
(–)0.1
(–)0.1
70*
30
10
280*
Unit
mA
mA
MHz
* : The 2SB1269/2SD1905 are classified by 1A h
FE
as follows :
Rank
hFE
Q
70 to 140
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
10904TN (KT)/O1598HA (KT)/D251MH/4177TA, TS No.2265–1/4
2SB1269/2SD1905
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
Ratings
min
(–)60
(–)50
(–)6
0.2
(0.1)
0.3
(0.7)
0.9
typ
max
(–)0.4
Unit
V
V
V
V
µs
µs
µs
µs
µs
VCE(sat) IC=(–)4A, IB=(–)0.4A
V(BR)CBO IC=(–)1mA, IE=0
V(BR)CEO IC=(–)1mA, RBE=∞
V(BR)EBO
ton
tstg
tf
IE=(–)1mA, IC=0
See specified test circuit.
See specified test circuit.
See specified test circuit.
Switching Time Test Circuit
PW=20µs
tr, tf≤15ns
INPUT
IB1
OUTPUT
IB2
VR
50Ω
+
1µF
VBE= --5V
+
1µF
VCC=20V
RB
1Ω
100Ω
RL
10Ω
IC=10IB1= --10IB2=2A
(For PNP, the polarity is reversed.)
Collector Current, IC – A
Collector Current, IC – A
1A
--10
10
600
40
mA
0m
A
--12
IC -- VCE
2SB1269
mA
mA
0
A
80
600
1A
--
--
--400m
--
12
IC -- VCE
2SD1905
200mA
--8
mA
--200
8
--6
--4
--100mA
--80mA
--60mA
--40mA
--20mA
--10mA
IB=0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
6
100mA
80mA
60mA
40mA
20mA
4
--2
2
00
0
0
0.2
0.4
0.6
0.8
IB=0
1.0
1.2
1.4
Collector-to-Emitter Voltage, VCE – V
--12
ITR09490
12
Collector-to-Emitter Voltage, VCE – V
ITR09491
IC -- VBE
2SB1269
VCE=
--2V
IC -- VBE
2SD1905
VCE=2V
--10
10
Collector Current, IC – A
--8
Collector Current, IC – A
8
--6
6
--4
4
--2
2
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Base-to-Emitter Voltage, VBE – V
ITR09492
Base-to-Emitter Voltage, VBE – V
ITR09493
No.2265–2/4
2SB1269/2SD1905
5
3
2
hFE -- IC
2SB1269
VCE=
--2V
5
3
2
hFE -- IC
2SD1905
VCE=2V
DC Current Gain, hFE
DC Current Gain, hFE
3
2
3
2
3
2
5 7 --10
ITR09494
100
7
5
3
2
10
7
5
3
2
2
100
7
5
3
2
10
7
5
3
2
5
7 --0.1
Collector Current, IC – A
5 7 --1.0
3
5
7 0.1
2
3
5
Collector Current, IC – A
7 1.0
2
3
5
7
2
10
ITR09495
5
3
VCE(sat) -- IC
2SB1269
5
3
VCE(sat) -- IC
2SD1905
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
2
--1.0
7
5
3
2
--0.1
7
5
3
2
3
5
7 --0.1
2
3
5
Collector-to-Emitter
Saturation Voltage, VCE (sat) – V
2
1.0
7
5
3
2
0.1
7
5
3
2
IC / IB=20
IC / IB=10
=20
IC / IB
=10
/ IB
IC
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC – A
7 --1.0
2
3
5 7 --10
2
ITR09496
0.01
0.01
Collector Current, IC – A
2
5 7 10
2
ITR09497
3
2
--10
7
5
3
2
ASO
2SB1269
ASO
ICP=12A
2SD1905
ICP=–12A
Collector Current, IC – A
IC=–7A
10
7
5
3
IC=7A
s
m
10
ms
0
10
s
1m
ms
10
Collector Current, IC – A
1m
s
100
2
DC
ms
DC
op
--1.0
7
5
3
2
--0.1
5
1.0
7
5
3
2
t
era
e
op
rat
ion
ion
1ms to 100ms : single pulse
7 --1.0
2
3
5
7
--10
2
3
5
0.1
7 --100
ITR09498
50
5
1ms to 100ms : single pulse
7 1.0
2
3
5
7
10
2
3
5
Collector-to-Emitter Voltage, VCE – V
2.0
Collector-to-Emitter Voltage, VCE – V
7 100
ITR09499
PC -- Ta
2SB1269 / 2SD1905
PC -- Ta
2SB1269 / 2SD1905
Collector Dissipation, P
C
– W
Collector Dissipation, P
C
– W
1.65
1.6
40
1.2
No
he
30
at
Id
sin
ea
lr
k
ed
0.8
20
iat
io
n
0.4
10
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta – ˚C
ITR09500
Ambient Temperature, Ta – ˚C
ITR09501
No.2265–3/4
2SB1269/2SD1905
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2004. Specifications and information herein are subject
to change without notice.
PS No.2265–4/4
京公网安备 11010802033920号
EEWORLD
