2SB1269S datasheet, PDF - EEWORLD Datasheet

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2SB1269S: DescriptionTRANSISTOR,BJT,PNP,50V V(BR)CEO,7A I(C),TO-221VAR; CategoryDiscrete semiconductor The transistor; File Size35KB，4 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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2SB1269S Overview

TRANSISTOR,BJT,PNP,50V V(BR)CEO,7A I(C),TO-221VAR

2SB1269S Parametric

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	compli
Maximum collector current (IC)	7 A
Configuration	Single
Minimum DC current gain (hFE)	140
Maximum operating temperature	140 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	40 W
surface mount	NO
Nominal transition frequency (fT)	10 MHz
Base Number Matches	1

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Ordering number:ENN2265A

PNP/NPN Epitaxial Planar Type Silicon Transistors

2SB1269/2SD1905

High-Current Switching Applications

Applications

· Suitable for relay drivers, high-speed inverters,

converters, and other general high-current switching

applications.

Package Dimensions

unit:mm

2049C

[2SB1269/2SD1905]

10.2

0.9

Features

· Suitable for sets whose height is restricted.

· Low collector to emitter saturation voltage.

· Wide ASO and highly resistant to breakdown.

20.9

11.5

4.5

1.3

1.6

1.2

9.4

0.8

11.0

8.8

0.4

( ) : 2SB1269

Specifications

Absolute Maximum Ratings

at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Collector Dissipation

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

ICP

Tstg

Tc=25˚C

2.55

1 : Base

2 : Collector

3 : Emitter

SANYO : TO-220MF

Conditions

2.7

Ratings

(–)60

(–)50

(–)6

(–)7

(–)12

1.65

150

–55 to +150

Unit

˚C

Electrical Characteristics

at Ta = 25˚C

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Symbol

ICBO

IEBO

hFE1

hFE2

100 to 200

140 to 280

Conditions

VCB=(–)40V, IE=0

VEB=(–)4V, IC=0

VCE=(–)2V, IC=(–)1A

VCE=(–)2V, IC=(–)5A

VCE=(–)5V, IC=(–)1A

Ratings

min

typ

max

(–)0.1

70*

280*

Unit

MHz

* : The 2SB1269/2SD1905 are classified by 1A h

as follows :

Rank

hFE

70 to 140

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

10904TN (KT)/O1598HA (KT)/D251MH/4177TA, TS No.2265–1/4

2SB1269/2SD1905

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be expor ted without obtaining the expor t license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of January, 2004. Specifications and information herein are subject

to change without notice.

PS No.2265–4/4

2SB1269S Related Products

	2SB1269S	2SD1905Q	2SD1905R	2SD1905S	2SB1269Q
Description	TRANSISTOR,BJT,PNP,50V V(BR)CEO,7A I(C),TO-221VAR	TRANSISTOR,BJT,NPN,50V V(BR)CEO,7A I(C),TO-221VAR	TRANSISTOR,BJT,NPN,50V V(BR)CEO,7A I(C),TO-221VAR	TRANSISTOR,BJT,NPN,50V V(BR)CEO,7A I(C),TO-221VAR	TRANSISTOR,BJT,PNP,50V V(BR)CEO,7A I(C),TO-221VAR
Reach Compliance Code	compli	compli	compli	compli	compli
Maximum collector current (IC)	7 A	7 A	7 A	7 A	7 A
Configuration	Single	Single	Single	Single	Single
Minimum DC current gain (hFE)	140	70	100	140	70
Maximum operating temperature	140 °C	150 °C	150 °C	150 °C	140 °C
Polarity/channel type	PNP	NPN	NPN	NPN	PNP
Maximum power dissipation(Abs)	40 W	40 W	40 W	40 W	40 W
surface mount	NO	NO	NO	NO	NO
Nominal transition frequency (fT)	10 MHz	10 MHz	10 MHz	10 MHz	10 MHz
Base Number Matches	1	1	1	1	1

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