Power Transistors
2SD1538, 2SD1538A
Silicon NPN epitaxial planar type
For low-voltage switching
Complementary to 2SB1070 and 2SB1070A
10.0±0.3
8.5±0.2
6.0±0.5
3.4±0.3
Unit: mm
1.0±0.1
M
Di ain
sc te
on na
tin nc
ue e/
d
q
q
q
s
Features
Low collector to emitter saturation voltage V
CE(sat)
High-speed switching
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25˚C)
40
50
20
40
5
8
4
1.5±0.1
1.5max.
1.1max.
10.5min.
2.0
0.8±0.1
0.5max.
2.54±0.3
s
Absolute Maximum Ratings
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
Collector to
2SD1538
base voltage
Collector to
2SD1538A
2SD1538
5.08±0.5
2
1
3
Ratings
Unit
V
1.5
–0.4
Peak collector current
Collector current
A
A
4.4±0.5
2.0
3.0
–0.2
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
P
C
T
j
25
0.8±0.1
R0.5
R0.5
1.3
W
2.54±0.3
0 to 0.4
1.1 max.
5.08±0.5
150
˚C
˚C
T
stg
–55 to +150
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package (DS)
s
Electrical Characteristics
Parameter
Collector cutoff
current
2SD1538
(T
C
=25˚C)
Symbol
Conditions
min
typ
max
50
50
50
4.4±0.5
Unit
µA
µA
V
2SD1538A
I
CBO
I
EBO
V
CB
= 40V, I
E
= 0
V
CB
= 50V, I
E
= 0
V
EB
= 5V, I
C
= 0
Emitter cutoff current
Collector to emitter
voltage
2SD1538
2SD1538A
V
CEO
h
FE1
I
C
= 10mA, I
B
= 0
20
40
45
90
Forward current transfer ratio
Pl
V
CE
= 2V, I
C
= 0.1A
V
CE
= 2V, I
C
= 1A
I
C
= 2A, I
B
= 0.1A
I
C
= 2A, I
B
= 0.1A
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
260
0.5
1.5
120
0.2
0.5
0.1
V
V
MHz
µs
µs
µs
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE2
V
CE
= 5V, I
C
= 0.5A, f = 10MHz
I
C
= 2A, I
B1
= 0.2A, I
B2
= – 0.2A,
V
CC
= 20V
Rank classification
Q
90 to 180
P
130 to 260
Rank
h
FE2
14.7±0.5
Emitter to base voltage
V
10.0±0.3
emitter voltage 2SD1538A
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8.5±0.2
6.0±0.3
3.4±0.3
1.0±0.1
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
V
+0.4
+0
1
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
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–
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
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maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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Electric Industrial Co., Ltd.
Microcontroller MCU
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