TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18, FET General Purpose Small Signal
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| package instruction | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | unknow |
| Configuration | SINGLE |
| FET technology | JUNCTION |
| Maximum feedback capacitance (Crss) | 3.5 pF |
| JEDEC-95 code | TO-18 |
| JESD-30 code | O-MBCY-W3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | DEPLETION MODE |
| Maximum operating temperature | 200 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 0.36 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| 2N4860A | 2N4091 | 2N4092 | 2N4093 | 2N4856A | 2N4858A | 2N4859A | 2N3970 | |
|---|---|---|---|---|---|---|---|---|
| Description | TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18, FET General Purpose Small Signal | TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18, FET General Purpose Small Signal | TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18, FET General Purpose Small Signal | TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18, FET General Purpose Small Signal | TRANSISTOR,JFET,N-CHANNEL,40V V(BR)DSS,50MA I(DSS),TO-18 | TRANSISTOR,JFET,N-CHANNEL,40V V(BR)DSS,8MA I(DSS),TO-18 | TRANSISTOR,JFET,N-CHANNEL,40V V(BR)DSS,50MA I(DSS),TO-18 | TRANSISTOR,JFET,N-CHANNEL,40V V(BR)DSS,150MA I(DSS),TO-18 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow | unknow | unknown |
| FET technology | JUNCTION | JUNCTION | JUNCTION | JUNCTION | JUNCTION | JUNCTION | JUNCTION | JUNCTION |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| surface mount | NO | NO | NO | NO | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | - | - | - |
| Maximum feedback capacitance (Crss) | 3.5 pF | 5 pF | 5 pF | 5 pF | 4 pF | - | - | - |
| JEDEC-95 code | TO-18 | TO-18 | TO-18 | TO-18 | TO-18 | - | - | - |
| JESD-30 code | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | - | - | - |
| Number of components | 1 | 1 | 1 | 1 | 1 | - | - | - |
| Number of terminals | 3 | 3 | 3 | 3 | 3 | - | - | - |
| Operating mode | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | - | - | - |
| Maximum operating temperature | 200 °C | 200 °C | 200 °C | 200 °C | - | 200 °C | 200 °C | 200 °C |
| Package body material | METAL | METAL | METAL | METAL | METAL | - | - | - |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | - | - | - |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | - | - | - |
| Maximum power dissipation(Abs) | 0.36 W | 1.8 W | 1.8 W | 1.8 W | - | 0.36 W | 0.36 W | 1.8 W |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | - | - | - |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | - | - | - |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | - | - | - |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | - | - | - |
京公网安备 11010802033920号
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