MRF6V2150NR1 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> MRF6V2150NR1

MRF6V2150NR1: DescriptionUHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270, ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size2MB，19 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/; Environmental Compliance

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UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270, ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB, 4 PIN

MRF6V2150NR1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Maker	Rochester Electronics
Parts packaging code	TO-270
package instruction	ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB, 4 PIN
Contacts	2
Manufacturer packaging code	CASE 1486-03
Reach Compliance Code	unknown
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	110 V
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	TO-270
JESD-30 code	R-PDFM-F4
JESD-609 code	e3
Humidity sensitivity level	3
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	COMMERCIAL
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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