HY531000S-80 datasheet, PDF - EEWORLD Datasheet

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HY531000S-80: DescriptionFast Page DRAM, 1MX1, 80ns, CMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18; Categorystorage storage; File Size322KB，14 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HY531000S-80 Overview

Fast Page DRAM, 1MX1, 80ns, CMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18

HY531000S-80 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SK Hynix
Parts packaging code	DIP
package instruction	DIP, DIP18,.3
Contacts	18
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FAST PAGE
Maximum access time	80 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	SEPARATE
JESD-30 code	R-PDIP-T18
JESD-609 code	e0
length	22.225 mm
memory density	1048576 bit
Memory IC Type	FAST PAGE DRAM
memory width	1
Number of functions	1
Number of ports	1
Number of terminals	18
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX1
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP18,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
refresh cycle	512
Maximum seat height	4.57 mm
Maximum standby current	0.001 A
Maximum slew rate	0.065 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	7.62 mm

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HY531000S-80 Related Products

	HY531000S-80	HY531000J-80	HY531000S-70	HY531000S-60	HY531000J-70	HY531000J-60
Description	Fast Page DRAM, 1MX1, 80ns, CMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18	Fast Page DRAM, 1MX1, 80ns, CMOS, PDSO20, 0.300 INCH, SOJ-26/20	Fast Page DRAM, 1MX1, 70ns, CMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18	Fast Page DRAM, 1MX1, 60ns, CMOS, PDIP18, 0.300 INCH, PLASTIC, DIP-18	Fast Page DRAM, 1MX1, 70ns, CMOS, PDSO20, 0.300 INCH, SOJ-26/20	Fast Page DRAM, 1MX1, 60ns, CMOS, PDSO20, 0.300 INCH, SOJ-26/20
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	DIP	SOJ	DIP	DIP	SOJ	SOJ
package instruction	DIP, DIP18,.3	SOJ, SOJ20/26,.34	DIP, DIP18,.3	DIP, DIP18,.3	SOJ, SOJ20/26,.34	SOJ, SOJ20/26,.34
Contacts	18	20	18	18	20	20
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FAST PAGE	FAST PAGE	FAST PAGE	FAST PAGE	FAST PAGE	FAST PAGE
Maximum access time	80 ns	80 ns	70 ns	60 ns	70 ns	60 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE
JESD-30 code	R-PDIP-T18	R-PDSO-J20	R-PDIP-T18	R-PDIP-T18	R-PDSO-J20	R-PDSO-J20
JESD-609 code	e0	e0	e0	e0	e0	e0
length	22.225 mm	17.15 mm	22.225 mm	22.225 mm	17.15 mm	17.15 mm
memory density	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit
Memory IC Type	FAST PAGE DRAM	FAST PAGE DRAM	FAST PAGE DRAM	FAST PAGE DRAM	FAST PAGE DRAM	FAST PAGE DRAM
memory width	1	1	1	1	1	1
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	18	20	18	18	20	20
word count	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words
character code	1000000	1000000	1000000	1000000	1000000	1000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	1MX1	1MX1	1MX1	1MX1	1MX1	1MX1
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	SOJ	DIP	DIP	SOJ	SOJ
Encapsulate equivalent code	DIP18,.3	SOJ20/26,.34	DIP18,.3	DIP18,.3	SOJ20/26,.34	SOJ20/26,.34
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE	IN-LINE	IN-LINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	512	512	512	512	512	512
Maximum seat height	4.57 mm	3.76 mm	4.57 mm	4.57 mm	3.76 mm	3.76 mm
Maximum standby current	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A
Maximum slew rate	0.065 mA	0.065 mA	0.075 mA	0.085 mA	0.075 mA	0.085 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	YES	NO	NO	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	J BEND	THROUGH-HOLE	THROUGH-HOLE	J BEND	J BEND
Terminal pitch	2.54 mm	1.27 mm	2.54 mm	2.54 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	7.62 mm	7.62 mm	7.62 mm	7.62 mm	7.62 mm	7.62 mm
Maker	SK Hynix	SK Hynix	-	SK Hynix	SK Hynix	SK Hynix

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