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2SD1065-Q

Description
Power Bipolar Transistor, 15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size37KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SD1065-Q Overview

Power Bipolar Transistor, 15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN

2SD1065-Q Parametric

Parameter NameAttribute value
Objectid1986269598
Parts packaging codeTO-3PB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)15 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)90 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
Ordering number:ENN825C
PNP/NPN Epitaxial Planar Silicon Tranasistors
2SB829/2SD1065
50V/15A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters, and
other general high-current switching applications.
Package Dimensions
unit:mm
2022A
[2SD829/2SD1065]
15.6
14.0
2.6
3.2
3.5
4.8
Features
· Low-saturation collector-to-emitter voltage :
V
CE(sat)
=–0.5V max.
· Wide ASO leading to high resistance to breakdown.
2.0
1.6
2.0
20.0
0.6
1.0
1
0.6
2
3
1.3
1.2
15.0
20.0
( ) : 2SB829
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
5.45
5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
1.4
Ratings
(–)60
(–)50
(–)6
(–)15
(–)20
Unit
V
V
V
A
A
W
˚C
Tc=25˚C
90
150
–55 to +150
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Symbol
ICBO
IEBO
hFE1
hFE2
fT
VCE(sat)
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)1A
VCE=(–)2V, IC=(–)8A
VCE=(–)5V, IC=(–)1A
IC=(–)8A, IB=(–)0.4A
70*
30
20
(–0.26)
0.18
(–0.5)
0.4
MHz
V
V
Conditions
Ratings
min
typ
max
(–)0.1
(–)0.1
280*
Unit
mA
mA
* : The 2SB829/2SD1065 are classified by 1A h
FE
as follows :
Rank
hFE
Q
70 to 140
R
100 to 200
S
140 to 280
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O0303TN (KT)/91098HA (KT)/10996TS (KOTO) 8-3880/4017KI/3145KI No.825–1/4

2SD1065-Q Related Products

2SD1065-Q 2SB829-Q 2SB829-R TFS1748 2SD1065-S 2SD1065-R
Description Power Bipolar Transistor, 15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN Power Bipolar Transistor, 15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN Power Bipolar Transistor, 15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN Vectron International Filter specification 15A, 50V, NPN, Si, POWER TRANSISTOR, TO-218, TO-3PB, 3 PIN Power Bipolar Transistor, 15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PB, 3 PIN
Objectid 1986269598 1986269592 - - 1417098703 1986269599
Parts packaging code TO-3PB TO-3PB TO-3PB - TO-218 TO-3PB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 - TO-3PB, 3 PIN FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 - 2 3
Reach Compliance Code unknown unknown unknow - unknown unknown
ECCN code EAR99 EAR99 EAR99 - - EAR99
Maximum collector current (IC) 15 A 15 A 15 A - 15 A 15 A
Collector-emitter maximum voltage 50 V 50 V 50 V - 50 V 50 V
Configuration SINGLE SINGLE SINGLE - SINGLE SINGLE
Minimum DC current gain (hFE) 70 70 100 - 140 100
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 - R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 - 1 1
Number of terminals 3 3 3 - 3 3
Maximum operating temperature 150 °C 150 °C 150 °C - 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN PNP PNP - NPN NPN
Maximum power dissipation(Abs) 90 W 90 W 90 W - 90 W 90 W
Certification status Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified
surface mount NO NO NO - NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE - SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING - SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON - SILICON SILICON
Nominal transition frequency (fT) 20 MHz 20 MHz 20 MHz - 20 MHz 20 MHz
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