2SK2439 datasheet, PDF - EEWORLD Datasheet

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2SK2439: DescriptionPower Field-Effect Transistor, 12A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TP, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size69KB，1 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SK2439 Overview

Power Field-Effect Transistor, 12A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TP, 3 PIN

2SK2439 Parametric

Parameter Name	Attribute value
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	12 A
Maximum drain current (ID)	12 A
Maximum drain-source on-resistance	0.06 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	30 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Transistor component materials	SILICON
Base Number Matches	1

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Description	Power Field-Effect Transistor, 12A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TP, 3 PIN	Power Field-Effect Transistor, 40A I(D), 30V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TP, 3 PIN	Power Field-Effect Transistor, 18A I(D), 30V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	Power Field-Effect Transistor, 22A I(D), 30V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	Power Field-Effect Transistor, 35A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	Power Field-Effect Transistor, 6A I(D), 30V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TP, 3 PIN	Power Field-Effect Transistor, 2A I(D), 30V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PCP, 3 PIN	Power Field-Effect Transistor, 5A I(D), 30V, 0.12ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
package instruction	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PDSO-G8
Contacts	3	3	3	3	3	3	3	8
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Minimum drain-source breakdown voltage	30 V	30 V	30 V	30 V	30 V	30 V	30 V	30 V
Maximum drain current (ID)	12 A	40 A	18 A	22 A	35 A	6 A	2 A	5 A
Maximum drain-source on-resistance	0.06 Ω	0.13 Ω	0.075 Ω	0.055 Ω	0.035 Ω	0.078 Ω	0.25 Ω	0.12 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSIP-T3	R-PSIP-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSIP-T3	R-PSSO-F3	R-PDSO-G8
Number of terminals	3	3	3	3	3	3	3	8
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	IN-LINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	30 W	20 W	50 W	60 W	70 W	30 W	3.5 W	2 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	YES	YES
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	FLAT	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	DUAL
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-
Maximum drain current (Abs) (ID)	12 A	4 A	18 A	22 A	35 A	6 A	-	5 A
Number of components	1	1	1	1	1	1	1	-
Maximum operating temperature	150 °C	150 °C	-	-	-	150 °C	150 °C	150 °C
Base Number Matches	1	1	1	1	1	1	-	-

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