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2SK2437

Description
Power Field-Effect Transistor, 2A I(D), 30V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PCP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size69KB,1 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SK2437 Overview

Power Field-Effect Transistor, 2A I(D), 30V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PCP, 3 PIN

2SK2437 Parametric

Parameter NameAttribute value
Objectid1445017333
package instructionSMALL OUTLINE, R-PSSO-F3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
YTEOL0
ConfigurationSINGLE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)2 A
Maximum drain-source on-resistance0.25 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-F3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)3.5 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationSINGLE
Transistor component materialsSILICON

2SK2437 Related Products

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Description Power Field-Effect Transistor, 2A I(D), 30V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PCP, 3 PIN Power Field-Effect Transistor, 40A I(D), 30V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TP, 3 PIN Power Field-Effect Transistor, 12A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TP, 3 PIN Power Field-Effect Transistor, 18A I(D), 30V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Power Field-Effect Transistor, 22A I(D), 30V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Power Field-Effect Transistor, 35A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Power Field-Effect Transistor, 6A I(D), 30V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TP, 3 PIN Power Field-Effect Transistor, 5A I(D), 30V, 0.12ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
package instruction SMALL OUTLINE, R-PSSO-F3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PDSO-G8
Contacts 3 3 3 3 3 3 3 8
Reach Compliance Code unknown unknow unknow unknow unknow unknow unknow unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Minimum drain-source breakdown voltage 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Maximum drain current (ID) 2 A 40 A 12 A 18 A 22 A 35 A 6 A 5 A
Maximum drain-source on-resistance 0.25 Ω 0.13 Ω 0.06 Ω 0.075 Ω 0.055 Ω 0.035 Ω 0.078 Ω 0.12 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-F3 R-PSIP-T3 R-PSIP-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSIP-T3 R-PDSO-G8
Number of terminals 3 3 3 3 3 3 3 8
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE IN-LINE FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT IN-LINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 3.5 W 20 W 30 W 50 W 60 W 70 W 30 W 2 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES NO NO NO NO NO NO YES
Terminal form FLAT THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE DUAL
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE -
Number of components 1 1 1 1 1 1 1 -
Maximum operating temperature 150 °C 150 °C 150 °C - - - 150 °C 150 °C
Maximum drain current (Abs) (ID) - 4 A 12 A 18 A 22 A 35 A 6 A 5 A
Base Number Matches - 1 1 1 1 1 1 -
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