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2SD1347-U

Description
3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, MP, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size34KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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2SD1347-U Overview

3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, MP, 3 PIN

2SD1347-U Parametric

Parameter NameAttribute value
Objectid1426751429
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknown
Maximum collector current (IC)3 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)280
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
VCEsat-Max0.5 V
Ordering number:ENN1244C
PNP/NPN Epitaxial Planar Silicon Transistors
2SB985/2SD1347
Large-Current Driving Applications
Applcations
· Power supplies, relay drivers, lamp drivers, electrical
equipment.
Package Dimensions
unit:mm
2006B
[2SB985/2SD1347]
6.0
5.0
Features
· Adoption of FBET, MBIT processes.
· Low saturation voltage.
· Large current capacity and wide ASO.
0.5
0.6
4.7
6.0
14.0
3.0
8.5
0.5
0.5
1 2 3
( ) : 2SB985
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
1.45
1.45
1 : Emitter
2 : Collector
3 : Base
SANYO : MP
Ratings
(–)60
(–)50
(–)6
(–)3
(–)6
1
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Common Base Output Capacitance
Symbol
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=(–)40V, IE=0
VEB=(–)4V, IC=0
VCE=(–)2V, IC=(–)100mA
VCE=(–)2V, IC=(–)3A
VCE=(–)10V, IC=(–)50mA
VCB=(–)10V, f=1MHz
100*
40
150
25(39)
MHz
pF
Conditions
Ratings
min
typ
max
(–)1.0
(–)1.0
560*
Unit
µA
µA
* : The 2SB985/2SD1347 are classified by 100mA h
FE
as follows :
Rank
hFE
R
100 to 200
S
140 to 280
T
200 to 400
U
280 to 560
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O0303TN (KT)/92098HA (KT)/4077KI/D064MW/1253KI, TS No.1244–1/4
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