2SD2275Q datasheet, PDF - EEWORLD Datasheet

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2SD2275Q: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size234KB，2 Pages; ManufacturerInchange Semiconductor

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2SD2275Q Overview

Transistor

2SD2275Q Parametric

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknow
Base Number Matches	1

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INCHANGE Semiconductor

isc

Product Specification

isc

Silicon NPN Darlington Power Transistor

2SD2275

DESCRIPTION

·Collector-Emitter

Breakdown Voltage-

: V

(BR)CEO

= 100V(Min)

·High

DC Current Gain-

: h

5000( Min.) @(I

= 4A, V

= 5V)

·Low

Collector Saturation Voltage-

: V

CE(sat)

2.5V(Max)@ (I

= 4A, I

= 4mA)

·Complement

to Type 2SB1502

APPLICATIONS

·Designed

for power amplification.

ABSOLUTE MAXIMUM RATINGS(T

=25℃)

SYMBOL

PARAMETER

CBO

Collector-Base Voltage

CEO

Collector-Emitter Voltage

EBO

Emitter-Base Voltage

.cn

.is

VALUE

UNIT

120

100

3.5

Collector Current-Continuous

Collector Current-Peak

Collector Power Dissipation

=25℃

Collector Power Dissipation

=25℃

stg

Junction Temperature

150

℃

Storage Temperature

-55~150

isc Website：www.iscsemi.cn

2SD2275Q Related Products

	2SD2275Q	2SD2275P	2SD2275S
Description	Transistor	Transistor	Transistor
Reach Compliance Code	unknow	unknow	unknow
Base Number Matches	1	1	1

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