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2SK373-GR

Description
TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, 2-5F1C, SC-43, 3 PIN, FET General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size141KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SK373-GR Overview

TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, 2-5F1C, SC-43, 3 PIN, FET General Purpose Small Signal

2SK373-GR Parametric

Parameter NameAttribute value
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknow
ConfigurationSINGLE
FET technologyJUNCTION
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.4 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
2SK373
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK373
For Audio, High Voltage Amplifier and Constant Current
Applications
·
·
High breakdown voltage: V
GDS
=
−100
V (min)
High input impedance: I
GSS
=
−1.0
nA (max) (V
GS
=
−80
V)
Unit: mm
Maximum Ratings
(Ta
=
25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
V
GDS
I
G
P
D
T
j
T
stg
Rating
-100
10
400
125
-55~125
Unit
V
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
TO-92
SC-43
2-5F1C
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
Symbol
I
GSS
V
(BR) GDS
I
DSS
(Note)
V
GS (OFF)
ïY
fs
ï
C
iss
C
rss
NF
Test Condition
V
GS
= -80
V, V
DS
=
0
V
DS
=
0, I
G
= -100 mA
V
DS
=
10 V, V
GS
=
0
V
DS
=
10 V, I
D
=
0.1
mA
V
DS
=
10 V, V
GS
=
0, f
=
1 kHz
V
DS
=
10 V, V
GS
=
0, f
=
1 MHz
V
DG
=
10 V, I
D
=
0, f
=
1 MHz
V
DS
=
10 V, V
GS
=
0, R
G
=
100 kW,
f
=
100 Hz
Weight: 0.21 g (typ.)
Min
¾
-100
0.6
-0.4
1.5
¾
¾
¾
Typ.
¾
¾
¾
¾
4.6
13
3
0.5
Max
-1.0
¾
6.5
-3.5
¾
¾
¾
¾
Unit
nA
V
mA
V
mS
pF
pF
dB
Note: I
DSS
classification
O: 0.6~1.4 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA
1
2003-03-26

2SK373-GR Related Products

2SK373-GR 2SK373-O 2SK373-Y
Description TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, 2-5F1C, SC-43, 3 PIN, FET General Purpose Small Signal TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, 2-5F1C, SC-43, 3 PIN, FET General Purpose Small Signal TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92, 2-5F1C, SC-43, 3 PIN, FET General Purpose Small Signal
Parts packaging code TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Contacts 3 3 3
Reach Compliance Code unknow unknow unknow
Configuration SINGLE SINGLE SINGLE
FET technology JUNCTION JUNCTION JUNCTION
JEDEC-95 code TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE
Maximum operating temperature 125 °C 125 °C 125 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.4 W 0.4 W 0.4 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1
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