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2SD1624T

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size136KB,4 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric Compare View All

2SD1624T Overview

Transistor

2SD1624T Parametric

Parameter NameAttribute value
Reach Compliance Codecompli
Maximum collector current (IC)3 A
ConfigurationSingle
Minimum DC current gain (hFE)200
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.5 W
surface mountYES
Base Number Matches1
UTC 2SD1624 NPN EPITAXIAL PLANAR SILICON TRANSISTOR
HIGH CURRENT SWITCHIG
APPLICATION
DESCRIPTION
The UTC 2SD1624 applies to voltage regulators, relay
drivers, lamp drivers, and electrical equipment.
1
FEATURES
*Adoption of FBET, MBIT processes
*Low collector-to-emitter saturation voltage
*Fast switching speed.
*Large current capacity and wide ASO.
SOT-89
MARKING
XX
DG
1:EMITTER
2: COLLECTOR
3: BASE
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C ,unless otherwise specified )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Power Dissipation( Tc=25°C)
Collector Current(DC)
Collector Current(PULSE)
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
Icp
T
j
T
STG
VALUE
60
50
6
500
3
6
150
-55 ~ +150
UNIT
V
V
V
mW
A
A
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (note)
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Turn-on Time
SYMBOL
I
CBO
I
EBO
hFE
fT
Cob
V
CE(sat)
V
BE(sat)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
ton
TEST CONDITIONS
VCB=40V,IE=0
VEB=4V,IC=0
VCE=2V, Ic=100mA
VCE=10V, IC=50mA
VCE=10V,f=1MHz
IC=2A,IB=100mA
IC=2A,IB=100mA
IC=10µA,IE=0
IC=1mA,RBE=∞
IE=10µA,IC=0
See test circuit
MIN
TYP
MAX
1
1
560
UNIT
µA
µA
MHz
pF
V
V
V
V
V
ns
100
150
25
0.19
0.94
60
50
6
70
0.5
1.2
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R208-005,A

2SD1624T Related Products

2SD1624T 2SD1624R 2SD1624U
Description Transistor Transistor Transistor
Reach Compliance Code compli compli compli
Maximum collector current (IC) 3 A 3 A 3 A
Configuration Single Single Single
Minimum DC current gain (hFE) 200 100 280
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.5 W 0.5 W 0.5 W
surface mount YES YES YES
Base Number Matches 1 1 1
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