Power Transistors
2SD1633
Silicon NPN triple diffusion planar type darlington
Unit: mm
0.7
±0.1
For voltage switching
■
Features
•
High-speed switching
•
Satisfactory linearity of forward current transfer ratio h
FE
•
Full-pack package which can be installed to the heat sink with one screw
16.7
±0.3
10.0
±0.2
5.5
±0.2
4.2
±0.2
4.2
±0.2
2.7
±0.2
7.5
±0.2
φ
3.1
±0.1
Solder Dip
(4.0)
14.0
±0.5
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Base current
Collector power dissipation
T
a
=
25°C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
Rating
100
100
7
5
8
0.5
30
2.0
150
−55
to
+150
°C
°C
Unit
V
V
V
A
A
A
W
1.4
±0.1
1.3
±0.2
0.5
+0.2
–0.1
0.8
±0.1
2.54
±0.3
5.08
±0.5
1 2 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Internal Connection
C
B
E
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter sustaining voltage
*2
Symbol
Conditions
V
CB
=
100 V, I
E
=
0
V
CE
=
100 V, I
B
=
0
V
EB
=
7 V, I
C
=
0
V
CE
=
3 V, I
C
=
3 A
I
C
=
3 A, I
B
=
3 mA
I
C
=
3 A, I
B
=
3 mA
V
CE
=
10 V, I
C
=
1 A, f
=
1 MHz
I
C
=
3 A, I
B1
=
3 mA, I
B2
= −3
mA
V
CC
=
50 V
Min
100
Typ
Max
Unit
V
µA
µA
mA
V
V
MHz
µs
µs
µs
V
CEO(SUS)
I
C
=
0.2 A, L
=
25 mH
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Collector-base cutoff current (Emitter open)
Collector-emitter cut-off current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*1
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
100
100
5
1 500
15 000
1.5
2.0
15
3
5
3
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
*2: V
CEO(SUS)
test circuit
Rank
h
FE
Q
P
1 500 to 6 000 5 000 to 15 000
50 Hz/60 Hz
mercury relay
X
L
Y
1
Ω
15 V
G
120
Ω
6V
Publication date: March 2003
SJD00207AED
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
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tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
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(4) The products described in this material are intended to be used for standard applications or general
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Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
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Even when the products are used within the guaranteed values, take into the consideration of
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2002 JUL
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