2SK3871-01MR
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
(mm)
TO-220F
200406
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Maximum Avalanche current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
Operating and Storage
Temperature range
Isolation Voltage
Symbol
V
DS
V
DSX
I
D
I
D(puls]
V
GS
I
AR
E
AS
E
AR
dV
DS
/dt
dV/dt
P
D
T
ch
T
stg
V
ISO
Ratings
230
230
40
±160
±30
40
633.1
27
20
5
270
2.02
+150
-55 to +150
2
Unit
V
V
A
A
V
A
mJ
mJ
Remarks
V
GS
=-30V
Equivalent circuit schematic
Drain(D)
Note *1
Note *2
Note *3
Gate(G)
Source(S)
Note *1:Tch
<
150°C,Repetitive and Non-repetitive
=
Note *2:StartingTch=25°C,I
AS
=16A,L=4.09mH,
V
CC
=48V,R
G
=50Ω
kV/µs V
DS
< 230V
=
EAS limited by maximum channel temperature
kV/µs Note *4
and avalanch current.
Tc=25°C
W
See to the ‘Avalanche Energy’ graph
Ta=25°C
Note *3:Repetitive rating:Pulse width limited by
°C
maximum channel temperature.
°C
See to the ‘Transient Theemal impedance’
kVrms t=60sec f=60Hz
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time t
on
Turn-Off Time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
V
SD
t
rr
Q
rr
Symbol
R
th(ch-c)
R
th(ch-a)
graph
<
Note *4:I
F
< -I
D
, -di/dt=50A/µs,V
CC
= BV
DSS
,Tch< 150°C
=
=
Test Conditions
I
D
= 250µA
V
GS
=0V
µA
I
D
= 250
V
DS
=V
GS
V
DS
=230V V
GS
=0V
T
ch
=25°C
T
ch
=125°C
V
DS
=184V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=20A V
GS
=10V
I
D
=20A
V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MH
V
CC
=180V I
D
=20A
V
GS
=10V
R
GS
=10
Ω
V
CC
=115V
I
D
=40A
V
GS
=10V
I
F
=40A V
GS
=0V T
ch
=25°C
I
F
=40A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
Test Conditions
channel to case
channel to ambient
Min.
230
3.0
Typ.
Max.
5.0
25
250
100
76
Units
V
V
µA
nA
mΩ
S
pF
12
58
24
1880
2820
230
345
12
18
28
42
8.4
12.6
56
84
6
9
42.0
63.0
18.0
27.0
12.0
18.0
1.10
1.50
230
2.5
ns
nC
V
ns
µC
Thermalcharacteristics
Item
Thermal resistance
www.fujielectric.co.jp/fdt/scd
Min.
Typ.
Max.
1.316
58
Units
°C/W
°C/W
1
2SK3871-01MR
Characteristics
Allowable Power Dissipation
PD=f(Tc)
FUJI POWER MOSFET
120
100
90
Typical Output Characteristics
ID=f(VDS):80
µ
s pulse test,Tch=25
°
C
100
80
70
20V
10V
80
60
8V
PD [W]
ID [A]
60
50
40
40
7V
30
20
6.5V
20
10
VGS=5.5V
0
0
25
50
75
100
125
150
0
0
4
8
12
16
20
24
Tc [
°
C]
VDS [V]
100
Typical Transfer Characteristic
ID=f(VGS):80
µ
s pulse test,VDS=25V,Tch=25
°
C
100
Typical Transconductance
gfs=f(ID):80
µ
s pulse test,VDS=25V,Tch=25
°
C
10
10
ID[A]
1
1
0.1
0.1
0.1
gfs [S]
0
1
2
3
4
5
6
7
8
9
10
1
10
100
VGS[V]
ID [A]
0.30
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
µ
s pulse test,Tch=25
°
C
0.25
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=20A,VGS=10V
0.25
VGS=6V
6.5V
7V
0.20
RDS(on) [
Ω
]
0.20
RDS(on) [
Ω
]
8V
0.15
0.15
max.
0.10
0.10
10V
20V
0.05
typ.
0.05
0.00
0
10
20
30
40
50
60
70
80
0.00
-50
-25
0
25
50
75
100
125
150
ID [A]
Tch [
°
C]
2
2SK3871-01MR
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
µ
A
FUJI POWER MOSFET
7.0
6.5
6.0
5.5
5.0
20
18
16
Typical Gate Charge Characteristics
VGS=f(Qg):ID=40A,Tch=25
°
C
max.
VGS(th) [V]
14
12
Vcc= 46V
115V
184V
4.5
VGS [V]
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
min.
10
8
6
4
2
0
0
10
20
30
40
50
60
70
80
Tch [
°
C]
Qg [nC]
10n
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Ciss
100
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
µ
s pulse test,Tch=25
°
C
1n
Coss
10
C [F]
100p
IF [A]
1
Crss
0
1
2
3
10p
1p
-1
10
10
10
10
10
0.1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VDS [V]
VSD [V]
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=180V,VGS=10V,RG=10
Ω
700
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=40A
I
AS
=16A
600
500
10
2
td(off)
I
AS
=24A
t [ns]
td(on)
EAV [mJ]
400
300
I
AS
=40A
200
tf
10
1
tr
100
10
0
0
-1
10
10
0
10
1
10
2
0
25
50
75
100
125
150
ID [A]
starting Tch [
°
C]
3
2SK3871-01MR
Safe operating area
ID=f(VDS):Single Pulse,Tc=25
°
C
t=
1
µ
s
FUJI POWER MOSFET
10
2
10
µ
s
10
1
D.C.
100
µ
s
ID [A]
1ms
10
0
10ms
100ms
10
-1
10
0
10
1
10
2
10
3
VDS [V]
10
2
Maximum Avalanche Current Pulsewidth
I
AV
=f(t
AV
):starting Tch=25
°
C,Vcc=48V
Single Pulse
Avalanche Current I
AV
[A]
10
1
10
0
10
-1
10
-8
10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
t
AV
[sec]
10
1
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [°C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
http://www.fujielectric.co.jp/fdt/scd/
4
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