INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC4427
DESCRIPTION
·High
Breakdown Voltage-
: V
(BR)CEO
= 800V(Min)
·Fast
Switching speed
·Wide
Area of Safe Operation
APPLICATIONS
·Designed
for switching regulator Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current-Continuous
I
CP
Collector Current-Pulse
w
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VALUE
UNIT
1100
V
800
V
7
V
4.5
A
15
A
2
A
50
W
3
℃
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
P
C
Collector Power Dissipation
@ T
a
=25℃
T
J
Junction Temperature
150
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CE(
sat
)
V
BE(
sat
)
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Output Capacitance
CONDITIONS
I
C
= 5mA; R
BE
= ∞
I
C
= 1mA; I
E
= 0
I
E
= 1mA; I
C
=0
I
C
= 2A; I
B
= 0.4A
B
2SC4427
MIN
800
1100
7
TYP.
MAX
UNIT
V
V
V
2.0
1.5
10
10
40
V
V
μA
μA
I
C
= 2A; I
B
= 0.4A
B
Current-Gain—Bandwidth Product
Switching times
t
on
t
stg
t
f
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V
EB
= 5V; I
C
= 0
I
C
=0.3A ; V
CE
= 5V
10
8
I
C
= 1.5A ; V
CE
= 5V
I
E
= 0; V
CB
= 10V; f
test
=1.0MHz
I
C
= 0.3A ; V
CE
= 10V
I
C
= 3A , I
B1
= 0.6A; I
B2
= -1.2A
R
L
= 133Ω; V
CC
= 400V
V
CB
= 800V; I
E
= 0
90
15
pF
MHz
Turn-on Time
Storage Time
Fall Time
0.5
3.0
0.3
μs
μs
μs
h
FE-1
Classifications
K
10-20
L
15-30
M
20-40
isc Website：www.iscsemi.cn
2
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