2SK3889-01L,S,SJ
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
(mm)
200406
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
See to P4
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Maximum Avalanche current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
Operating and Storage
Temperature range
Symbol
V
DS
V
DSX
I
D
I
D(puls]
V
GS
I
AR
E
AS
E
AR
dV
DS
/dt
dV/dt
P
D
T
ch
T
stg
Ratings
600
600
9
±36
±30
9
462.3
16.5
20
5
165
1.67
+150
-55 to +150
Unit
V
V
A
A
V
A
mJ
mJ
Remarks
V
GS
=-30V
Equivalent circuit schematic
Drain(D)
Gate(G)
Note *1
Note *2
Note *3
Source(S)
Note *1:Tch
<
150°C,Repetitive and Non-repetitive
=
Note *2:StartingTch=25°C,I
AS
=3.6A,L=65.4mH,
V
CC
=60V,R
G
=50Ω
EAS limited by maximum channel temperature
and avalanch current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Theemal impedance’
graph
Note *4:I
F
< -I
D
, -di/dt=50A/µs,V
CC
< BV
DSS
,Tch< 150°C
=
=
=
kV/µs V
DS
< 600V
=
kV/µs Note *4
Tc=25°C
W
Ta=25°C
°C
°C
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time t
on
Turn-Off Time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
V
SD
t
rr
Q
rr
Symbol
R
th(ch-c)
R
th(ch-a)
Test Conditions
I
D
= 250µA
V
GS
=0V
µA
I
D
= 250
V
DS
=V
GS
T
ch
=25°C
V
DS
=600V V
GS
=0V
T
ch
=125°C
V
DS
=480V V
GS
=0V
V
GS
=±30V V
DS
=0V
I
D
=4.5A V
GS
=10V
I
D
=4.5A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MH
V
CC
=300V I
D
=4.5A
V
GS
=10V
R
GS
=10
Ω
V
CC
=300V
I
D
=9A
V
GS
=10V
I
F
=9A V
GS
=0V T
ch
=25°C
I
F
=9A V
GS
=0V
-di/dt=100A/µs T
ch
=25°C
Test Conditions
channel to case
channel to ambient
Min.
600
3.0
Typ.
Max.
5.0
25
250
100
1.00
Units
V
V
µA
nA
Ω
S
pF
4.5
0.82
9.0
950
1425
130
195
6.0
9.0
16
24
6.0
9.0
33
50
5.5
8.3
25
38
10
15
8.0
12.0
1.10
1.50
860
7.0
ns
nC
V
ns
µC
Thermalcharacteristics
Item
Thermal resistance
www.fujielectric.co.jp/fdt/scd
Min.
Typ.
Max.
0.758
75
Units
°C/W
°C/W
1
2SK3889-01L,S,SJ
Characteristics
Allowable Power Dissipation
PD=f(Tc)
FUJI POWER MOSFET
200
180
160
20
Typical Output Characteristics
ID=f(VDS):80
µ
s pulse test,Tch=25
°
C
20V 10V
8.0V
15
140
120
PD [W]
ID [A]
100
80
60
10
6.5V
5
40
20
0
0
25
50
75
100
125
150
0
0
5
10
15
20
6.0V
VGS=5.5V
25
30
Tc [
°
C]
VDS [V]
100
Typical Transfer Characteristic
ID=f(VGS):80
µ
s pulse test,VDS=25V,Tch=25
°
C
100
Typical Transconductance
gfs=f(ID):80
µ
s pulse test,VDS=25V,Tch=25
°
C
10
10
ID[A]
1
1
0.1
0.1
0.1
0
1
2
3
4
5
6
7
8
9
10
gfs [S]
1
10
100
VGS[V]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
µ
s pulse test,Tch=25
°
C
2.0
VGS=5.5V 6.0V
6.5V
3.00
2.75
2.50
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=4.5A,VGS=10V
1.5
2.25
8.0V 10V
20V
2.00
RDS(on) [
Ω
]
RDS(on) [
Ω
]
1.75
1.50
1.25
1.00
typ.
max.
1.0
0.5
0.75
0.50
0.25
0.0
0
5
10
15
20
0.00
-50
-25
0
25
50
75
100
125
150
ID [A]
Tch [
°
C]
2
2SK3889-01L,S,SJ
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
µ
A
FUJI POWER MOSFET
7.0
6.5
6.0
5.5
5.0
14
Typical Gate Charge Characteristics
VGS=f(Qg):ID=9A,Tch=25
°
C
12
Vcc= 120V
300V
max.
10
VGS(th) [V]
480V
4.5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
min.
VGS [V]
4.0
8
6
4
2
0
0
10
20
30
40
Tch [
°
C]
Qg [nC]
10
4
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
100
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
µ
s pulse test,Tch=25
°
C
10
3
Ciss
10
C [pF]
10
2
Coss
IF [A]
1
2
3
10
1
Crss
10
0
10
-1
10
0
10
1
10
10
0.1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VDS [V]
VSD [V]
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10
Ω
500
450
400
350
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=60V
I
AS
=3.6A
10
2
tf
td(off)
I
AS
=5.4A
300
EAV [mJ]
t [ns]
250
200
150
I
AS
=9A
td(on)
10
1
tr
100
50
10
0
0
-1
10
10
0
10
1
10
2
0
25
50
75
100
125
150
ID [A]
starting Tch [
°
C]
3
2SK3889-01L,S,SJ
10
2
FUJI POWER MOSFET
Maximum Avalanche Current Pulsewidth
I
AV
=f(t
AV
):starting Tch=25
°
C,Vcc=60V
Avalanche Current I
AV
[A]
10
1
Single Pulse
10
0
10
-1
10
-8
10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
t
AV
[sec]
10
1
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [°C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
Outline Drawings (mm)
Type(L)
Type(S)
Type(SJ)
4
1
2 3
1
4 2
3
1
2 3
1
2
3
http://www.fujielectric.co.jp/fdt/scd/
4
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