This m aterial and the inform ation herein is the p roperty of Fuji Electric
Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purp os es w ithout the express w ritten cons ent of
Fuji Electric Device Technolog y C o. ,Ltd.
DRAWN
DATE
Jun-28-'04
CHECKED
Jun-28-'04
CHECKED
Jun-28-'04
Date
Spec. No.
Device Name
Type Name
:
:
:
:
NAME
APPROVED
MS5F5814
Jun-28-2004
SPECIFICATION
2SK3886-01MR
Power MOSFET
DWG.NO.
MS5F5814
1 / 18
H04-004-05
This m aterial and the inform ation herein is the p roperty of Fuji Electric
Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purp os es w ithout the express w ritten cons ent of
Fuji Electric Device Technolog y C o. ,Ltd.
2006
Jun-28
2004
Revision
enactment
Date
Aug.-29
Classification
Index
a
Content
Revised Records
Revised RDS(on)-tch
graph.
DWG.NO.
MS5F5814
Drawn Checked Checked Approved
2 / 18
a
H04-004-03
1.Scope
2.Construction
3.Applications
4.Outview
This specifies Fuji Power MOSFET 2SK3886-01MR
N-Channel enhancement mode power MOSFET
for Switching
TO-220F
Outview See to 8/18 page
5.Absolute Maximum Ratings at Tc=25
(unless otherwise specified)
C
Description
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-repetitive
Maximum Avalanche Current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Maximum Power Dissipation
Operating and Storage
Temperature range
Isolation Voltage
Symbol
V
DS
V
DSX
I
D
I
DP
V
GS
I
AR
E
AS
E
AR
dV
DS
/dt
dV/dt
P
D
T
ch
T
stg
V
ISO
Characteristics
120
90
67
± 268
± 30
67
719.1
9.5
20
5
95
W
2.16
150
-55 to +150
2
C
C
kVrms
t=60sec
f=60Hz
Unit
V
V
A
A
V
A
mJ
mJ
kV/
s
kV/
s
Note *1
Note *2
Note *3
VDS
120V
Note *4
Tc=25°C
Ta=25°C
VGS=-30V
Remarks
This m aterial and the inform ation herein is the p roperty of Fuji Electric
Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purp os es w ithout the express w ritten cons ent of
Fuji Electric Device Technolog y C o. ,Ltd.
6.Electrical Characteristics at Tc=25
(unless otherwise specified)
C
Static Ratings
Description
Drain-Source
Breakdown Voltage BV
DSS
Gate Threshold
Voltage V
GS
(th)
Zero Gate Voltage
Drain Current I
DSS
Gate-Source
Leakage Current I
GSS
Drain-Source
On-State Resistance R
DS
(on)
Symbol
Conditions
I
D
=250
A
V
GS
=0V
I
D
=250
A
V
DS
=V
GS
V
DS
=120V
T
ch
=25
C
V
GS
=0V
V
DS
=96V
T
ch
=125
C
V
GS
=0V
V
GS
= ± 30V
V
DS
=0V
I
D
=33.5A
V
GS
=10V
DWG.NO.
min.
typ.
max.
Unit
120
3.0
-
-
-
-
-
-
-
5.0
25
V
V
A
250
-
-
100
nA
-
24.6
30.0
m
a
MS5F5814
3 / 18
H04-004-03
Dynamic Ratings
Description
Forward
Transconductance g
fs
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance Crss
td(on)
Turn-On Time
tr
td(off)
Turn-Off Time
Total Gate Charge
Gate-Source Charge
This m aterial and the inform ation herein is the p roperty of Fuji Electric
Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purp os es w ithout the express w ritten cons ent of
Fuji Electric Device Technolog y C o. ,Ltd.
Symbol
Conditions
I
D
=33.5A
V
DS
=25V
V
DS
=75V
V
GS
=0V
f=1MHz
min.
typ.
max.
Unit
14
-
-
28
1880
360
30
-
2820
540
45
S
Ciss
Coss
pF
-
V
cc
=48V
V
GS
=10V
I
D
=33.5A
R
GS
=10
V
cc
=60V
I
D
=67A
V
GS
=10V
-
-
-
-
-
-
-
20
35
50
23
52
16
18
30
53
75
35
78
24
27
nC
ns
tf
Q
G
Q
GS
Q
GD
Gate-Drain Charge
Reverse Diode
Description
Diode Forward
Symbol
Conditions
I
F
=67A
V
GS
=0V
I
F
=67A
V
GS
=0V
-di/dt=100A/
s
T
ch
=25
C
T
ch
=25
C
min.
typ.
max.
Unit
On-Voltage V
SD
Reverse Recovery
Time trr
Reverse Recovery
Charge Qrr
7.Thermal Resistance
Description
Channel to Case
Channel to Ambient
Rth(ch-c)
Rth(ch-a)
-
1.10
1.50
V
-
150
-
ns
-
0.9
-
C
Symbol
min.
typ.
max.
1.316
58
Unit
C/W
C/W
Note *1 : Tch
150 See Fig.1 and Fig.2
C,
Note *2 : Starting Tch=25
AS
=27A,L=1.32mH,Vcc=48V,R
G
=50
C,I
,See Fig.1 and Fig.2
E
AS
limited by maximum channel temperature and avalanche current.
See to the 'Avalanche Energy' graph of page 17/18.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Maximum Transient Thermal impedance' graph of page 18/18.
Note *4 : I
F
D
,-di/dt=50A/
-I
s,Vcc
DSS
,Tch
BV
150
C
MS5F5814
DWG.NO.
a
4 / 18
H04-004-03
This m aterial and the inform ation herein is the p roperty of Fuji Electric
Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purp os es w ithout the express w ritten cons ent of
Fuji Electric Device Technolog y C o. ,Ltd.
Fig.1 Test circuit
Fig.2 Operating waveforms
-15V
0
50Ω
+10V
D.U.T
DWG.NO.
IDP
L
MS5F5814
BV
DSS
V
GS
5 / 18
Vcc
I
D
V
DS
a
H04-004-03
京公网安备 11010802033920号
EEWORLD
