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BUK555-200B

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size353KB,5 Pages
ManufacturerNorth American Philips Discrete Products Div
Download Datasheet Parametric Compare View All

BUK555-200B Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

BUK555-200B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNorth American Philips Discrete Products Div
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)13 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)125 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)

BUK555-200B Related Products

BUK555-200B BUK555-200A
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Is it Rohs certified? incompatible incompatible
Maker North American Philips Discrete Products Div North American Philips Discrete Products Div
Reach Compliance Code unknown unknown
Configuration Single Single
Maximum drain current (Abs) (ID) 13 A 14 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0 e0
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 125 W 125 W
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)

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