BUK555-200A datasheet, PDF - EEWORLD Datasheet

BUK555-200A: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size353KB，5 Pages; ManufacturerNorth American Philips Discrete Products Div

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BUK555-200A Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	North American Philips Discrete Products Div
package instruction	,
Reach Compliance Code	unknown
Configuration	Single
Maximum drain current (Abs) (ID)	14 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	125 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)

	BUK555-200A	BUK555-200B
Description	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Is it Rohs certified?	incompatible	incompatible
Maker	North American Philips Discrete Products Div	North American Philips Discrete Products Div
Reach Compliance Code	unknown	unknown
Configuration	Single	Single
Maximum drain current (Abs) (ID)	14 A	13 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0	e0
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	125 W	125 W
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)

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