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BYV27-300

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size307KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Download Datasheet Parametric View All

BYV27-300 Overview

Rectifier Diode,

BYV27-300 Parametric

Parameter NameAttribute value
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknown
Diode typeRECTIFIER DIODE
BL
FEATURES
Low cost
GALAXY ELECTRICAL
BYV27-50(Z) - - - BYV27-600(Z)
VOLTAGE RANGE: 50 --- 600 V
CURRENT: 2.0, 1.9,1.6 A
SUPER FAST RECTIFIERS
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and sim ilar solvents
DO - 15
MECHANICAL DATA
Case: JEDEC DO-15,m olded plastic
Term inals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces,0.39 gram s
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unless otherwise specified.
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BYV27 BYV27 BYV27 BYV27 BYV27 BYV27 BYV27
UNITS
-100
-50
-150
-200
-300
-400
-600
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectif ied current
9.5mm lead length,
@T
A
=75
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
2.0
150
105
150
200
140
200
300
210
300
1.9
400
280
400
600
420
600
1.6
V
V
V
A
Peak forw ard surge current
10ms single half -sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
@ I
F
=I
F(AV)
Maximum reverse current
at rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
(Note3)
I
FSM
50.0
40.0
A
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
0.98
5.0
100.0
35
62
100
- 55 ----- + 125
- 55 ----- + 150
1.05
1.25
V
A
50
ns
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.1V DC.
3. Thermal resistance f rom junction to ambient.
www.galaxycn.com
Document Number 1764114
BL
GALAXY ELECTRICAL
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