2SK1540(L)(S), 2SK1541(L)(S)
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source
breakdown voltage
Symbol Min
2SK1540 V
(BR)DSS
2SK1541
V
(BR)GSS
I
GSS
450
500
±30
—
—
—
—
—
—
±10
250
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
= 7 A, V
GS
= 0
I
F
= 7 A, V
GS
= 0,
di
F
/dt = 100 A/µs
I
D
= 4 A, V
GS
= 10 V,
R
L
= 7.5
Ω
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
= 360 V, V
GS
= 0
V
DS
= 400 V, V
GS
= 0
V
GS(off)
2.0
—
—
|yfs|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
4.0
—
—
—
—
—
—
—
—
—
—
0.6
0.7
6.5
1050
280
40
15
55
95
40
0.95
320
3.0
0.8
0.9
—
—
—
—
—
—
—
—
—
—
I
D
= 4 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
1
Typ
—
Max
—
Unit
V
Test conditions
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
Gate to source leak current
Zero gate voltage
drain current
2SK1540 I
DSS
2SK1541
Gate to source cutoff voltage
I
D
= 1 mA, V
DS
= 10 V
I
D
= 4 A, V
GS
= 10 V *
1
Static Drain to source 2SK1540 R
DS(on)
on state resistance
2SK1541
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note
1. Pulse test
See characteristic curves of 2SK1157, 2SK1158.
3
2SK1540(L)(S), 2SK1541(L)(S)
Notice
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the examples
described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third
party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
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5
Embedded System
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