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2SD2052P

Description
Power Bipolar Transistor, 9A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size171KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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2SD2052P Overview

Power Bipolar Transistor, 9A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3, 3 PIN

2SD2052P Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-3-3L
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)9 A
Collector-emitter maximum voltage150 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)3 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
Base Number Matches1
Power Transistors
2SD2052
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1361
Unit: mm
M
ain
Di
sc te
on na
tin nc
ue e/
d
q
q
q
q
q
16.2±0.5
12.5
3.5
Solder Dip
s
Absolute Maximum Ratings
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
Collector to base voltage
(T
C
=25˚C)
150
150
5
Ratings
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
P
C
T
j
/D
Parameter
isc
s
Electrical Characteristics
Collector cutoff current
Emitter cutoff current
on
(T
C
=25˚C)
Symbol
tin
ue
T
stg
–55 to +155
I
CBO
I
EBO
h
FE1
Forward current transfer ratio
h
FE2*
h
FE3
V
BE
V
CE(sat)
f
T
C
ob
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
FE2
Rank classification
Q
60 to 120
S
80 to 160
P
100 to 200
Rank
h
FE2
d
pla inc
Pl
ea
ne lud
se
pla m d m es
ne ain ain foll
htt visit
d d te te ow
p:/ fo
/w llo dis isc nan nan ing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
/ ion
.
2.0±0.2
2.0±0.1
1.1±0.1
0.6±0.2
5.45±0.3
10.9±0.5
2
Satisfactory foward current transfer ratio h
FE
vs. collector cur-
rent I
C
characteristics
Wide area of safe operation (ASO)
High transition frequency f
T
Optimum for the output stage of a HiFi audio amplifier
Full-pack package which can be installed to the heat sink with
one screw
0.7
s
Features
15.0±0.3
11.0±0.2
5.0±0.2
3.2
Unit
V
V
V
A
A
21.0±0.5
15.0±0.2
φ3.2±0.1
1
3
15
9
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
100
3
W
150
˚C
˚C
Conditions
min
typ
max
50
50
Unit
µA
µA
ce
V
CB
= 150V, I
E
= 0
V
EB
= 3V, I
C
= 0
Ma
int
en
an
V
CE
= 5V, I
C
= 20mA
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 7A
V
CE
= 5V, I
C
= 7A
20
60
20
200
1.8
2.0
V
V
I
C
= 7A, I
B
= 0.7A
V
CE
= 5V, I
C
= 0.5A, f = 1MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
20
150
MHz
pF
1

2SD2052P Related Products

2SD2052P 2SD2052Q 2SD2052S
Description Power Bipolar Transistor, 9A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3, 3 PIN Power Bipolar Transistor, 9A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3, 3 PIN Power Bipolar Transistor, 9A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TOP-3, 3 PIN
Is it Rohs certified? incompatible incompatible incompatible
Parts packaging code TO-3-3L TO-3-3L TO-3-3L
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 9 A 9 A 9 A
Collector-emitter maximum voltage 150 V 150 V 150 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 60 80
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 3 W 3 W 3 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 20 MHz 20 MHz 20 MHz
Base Number Matches 1 1 1

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