Power Transistors
2SD2052
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1361
Unit: mm
M
ain
Di
sc te
on na
tin nc
ue e/
d
q
q
q
q
q
16.2±0.5
12.5
3.5
Solder Dip
s
Absolute Maximum Ratings
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
Collector to base voltage
(T
C
=25˚C)
150
150
5
Ratings
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
P
C
T
j
/D
Parameter
isc
s
Electrical Characteristics
Collector cutoff current
Emitter cutoff current
on
(T
C
=25˚C)
Symbol
tin
ue
T
stg
–55 to +155
I
CBO
I
EBO
h
FE1
Forward current transfer ratio
h
FE2*
h
FE3
V
BE
V
CE(sat)
f
T
C
ob
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
FE2
Rank classification
Q
60 to 120
S
80 to 160
P
100 to 200
Rank
h
FE2
d
pla inc
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2.0±0.2
2.0±0.1
1.1±0.1
0.6±0.2
5.45±0.3
10.9±0.5
2
Satisfactory foward current transfer ratio h
FE
vs. collector cur-
rent I
C
characteristics
Wide area of safe operation (ASO)
High transition frequency f
T
Optimum for the output stage of a HiFi audio amplifier
Full-pack package which can be installed to the heat sink with
one screw
0.7
s
Features
15.0±0.3
11.0±0.2
5.0±0.2
3.2
Unit
V
V
V
A
A
21.0±0.5
15.0±0.2
φ3.2±0.1
1
3
15
9
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
100
3
W
150
˚C
˚C
Conditions
min
typ
max
50
50
Unit
µA
µA
ce
V
CB
= 150V, I
E
= 0
V
EB
= 3V, I
C
= 0
Ma
int
en
an
V
CE
= 5V, I
C
= 20mA
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 7A
V
CE
= 5V, I
C
= 7A
20
60
20
200
1.8
2.0
V
V
I
C
= 7A, I
B
= 0.7A
V
CE
= 5V, I
C
= 0.5A, f = 1MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
20
150
MHz
pF
1
Power Transistors
P
C
— Ta
120
20
(1) T
C
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) Without heat sink
(P
C
=3W)
(1)
T
C
=25˚C
I
B
=1000mA
900mA
800mA
700mA
600mA
500mA
400mA
300mA
200mA
8
100mA
50mA
2SD2052
I
C
— V
CE
20
V
CE
=5V
I
C
— V
BE
Collector power dissipation P
C
(W)
100
Collector current I
C
(A)
Collector current I
C
(A)
16
16
25˚C
12
T
C
=–25˚C
100˚C
80
12
60
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
10
3
1
10000
3000
I
C
/I
B
=10
Forward current transfer ratio h
FE
25˚C
–25˚C
1000
300
100
Transition frequency f
T
(MHz)
T
C
=100˚C
0.3
0.1
0.03
0.01
0.003
0.001
0.1
0.3
1
3
10
30
100
Collector current I
C
(A)
isc
C
ob
— V
CB
/D
10000
Collector output capacitance C
ob
(pF)
an
3000
I
E
=0
f=1MHz
T
C
=25˚C
Collector current I
C
(A)
1000
300
100
30
0.03
10
1
3
10
30
100
0.01
1
3
10
30
100
300
1000
Collector to base voltage V
CB
(V)
2
d
pla inc
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0
0
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
2.0
M
ain
Di
sc te
on na
tin nc
ue e/
d
40
20
4
4
(2)
(3)
8
2.4
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
h
FE
— I
C
f
T
— I
C
1000
300
100
30
10
3
1
V
CE
=5V
V
CE
=5V
f=1MHz
T
C
=25˚C
T
C
=100˚C
25˚C
–25˚C
30
10
3
0.3
1
0.1
0.3
1
3
10
30
100
0.1
0.01 0.03
0.1
0.3
1
3
10
ue
Collector current I
C
(A)
Collector current I
C
(A)
on
tin
Area of safe operation (ASO)
Non repetitive pulse
T
C
=25˚C
100
30
10
ce
I
CP
I
C
Ma
int
en
3
1
t=10ms
100ms
DC
0.3
0.1
Collector to emitter voltage V
CE
(V)
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
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–
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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int
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M
ain
Di
sc te
on na
tin nc
ue e/
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/D
isc
on
tin
ue
di